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Número de pieza | KMB054N40DB | |
Descripción | N-Channel Trench MOSFET | |
Fabricantes | KEC | |
Logotipo | ||
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TECHNICAL DATA
KMB054N40DB
N-Ch Trench MOSFET
General Description
This Trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche
characteristics. It is mainly suitable for Back-light Inverter and Power
Supply.
FEATURES
VDSS=40V, ID=54A.
Low Drain-Source ON Resistance.
: RDS(ON)=8.5m (Max.) @ VGS=10V
: RDS(ON)=11m (Max.) @ VGS=4.5V
Super High Dense Cell Design.
High Power and Current Handling Capability.
A
CD
B
H
G
FF
J
E
K
L
N
M
DIM MILLIMETERS
A 6.60 +_ 0.20
B 6.10 +_0.20
C 5.34 +_ 0.30
D 0.70 +_0.20
E 2.70 +_ 0.15
F 2.30 +_ 0.10
G 0.96 MAX
H 0.90 MAX
J 1.80 +_0.20
K 2.30 +_0.10
L 0.50 +_ 0.10
M 0.50 +_0.10
N 0.70 MIN
O 0.1 MAX
123
O
1. GATE
2. DRAIN
3. SOURCE
MAXIMUM RATING (Ta=25 Unless otherwise Noted)
CHARACTERISTIC
SYMBOL N-Ch UNIT
Drain-Source Voltage
Gate-Source Voltage
VDSS
VGSS
40 V
20 V
Drain Current
DC@TC=25
Pulsed
Drain-Source-Diode Forward Current
(Note1)
(Note2)
ID
IDP
IS
54
A
100
100 A
@TC=25
Drain Power Dissipation
@Ta=25
(Note1)
(Note2)
PD
45
W
3.1
Maximum Junction Temperature
Storage Temperature Range
Tj 150
Tstg -55 150
Thermal Resistance, Junction to Case (Note1)
RthJC
2.8
/W
Thermal Resistance, Junction to Ambient (Note2) RthJA 40 /W
Note 1) RthJC means that the infinite heat sink is mounted.
Note 2) Surface Mounted on 1 1 Pad of 2 oz copper.
DPAK (1)
Marking
Type Name
KMB
054N40
DB
Lot No
PIN CONNECTION (TOP VIEW)
D
2
2
1
G
2008. 6. 10
13
3
S
Revision No : 0
1/5
1 page KMB054N40DB
2008. 6. 10
Revision No : 0
5/5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet KMB054N40DB.PDF ] |
Número de pieza | Descripción | Fabricantes |
KMB054N40DA | N-Channel Trench MOSFET | KEC |
KMB054N40DB | N-Channel Trench MOSFET | KEC |
KMB054N40DC | N-Channel Trench MOSFET | KEC |
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