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PDF KMB030N30D Data sheet ( Hoja de datos )
| Número de pieza | KMB030N30D | |
| Descripción | N-Channel Trench MOSFET | |
| Fabricantes | KEC | |
| Logotipo |  |
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SEMICONDUCTOR
TECHNICAL DATA
KMB030N30D
N-Ch Trench MOSFET
General Description
Switching regulator and DC-DC Converter applications.
It s mainly suitable for power management in PC,
portable equipment and battery powered systems.
FEATURES
VDSS=30V, ID=30A.
Low Drain-Source ON Resistance.
: RDS(ON)=18m (Max.) @ VGS=10V
: RDS(ON)=36m (Max.) @ VGS=4.5V
Super High Dense Cell Design.
High Power and Current Handling Capability.
A
C
M
G
FF
H DIM MILLIMETERS
D
J
A 6.6 +_ 0.2
B 6.1+_ 0.2
C 5.33 +_ 0.1
D 1.08+_ 0.2
B E 2.92 +_ 0.3
F 2.28+_ 0.1
G 1.1 MAX
H 2.3 +_ 0.1
E
K
J 0.51+_ 0.1
N K 1.01+_ 0.1
L 0.51+_ 0.1
M 0.8 +_ 0.1
L N 1.5+_ 0.2
123
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING UNIT
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGSS
Drain Current
DC
Pulsed (Note 1)
ID *
IDP *
Source-Drain Diode Current
IS
Drain Power Dissipation (Tc=25 )
PD *
Maximum Junction Temperature
Tj
Storage Temperature Range
Tstg
Thermal Resistance, Junction to Case
RthJC
Thermal Resistance, Junction to Ambient RthJA*
* : Surface Mounted on FR4 Board, t 10sec.
30
20
30
75
20
50
150
-55 150
3
50
V
V
A
A
W
/W
/W
DPAK (2)
D
G
S
2007. 3. 22
Revision No : 1
1/5
1 page  
KMB030N30D
Fig. 1 Gate Charge
Schottky
ID Diode
0.5 VDSS
1.0 mA
VGS
ID
VDS
VGS
10 V
Qgs Qgd
Qg
Q
Fig. 2 Resistive Load Switching
0.5 VDSS
6Ω
10 V VGS
RL
VDS
VDS
90%
VGS 10%
td(on)
tr
ton
td(off)
tf
toff
2007. 3. 22
Revision No : 1
5/5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet KMB030N30D.PDF ] | |
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