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PDF KMB080N75PA Data sheet ( Hoja de datos )
| Número de pieza | KMB080N75PA | |
| Descripción | N CHANNEL MOS FIELD EFFECT TRANSISTOR | |
| Fabricantes | KEC | |
| Logotipo |  |
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SEMICONDUCTOR
TECHNICAL DATA
General Description
It s mainly suitable for low voltage applications such as automotive,
DC/DC converters and a load switch in battery powered applications
FEATURES
VDSS= 75V, ID= 80A
Drain-Source ON Resistance :
RDS(ON)=12m (Max.) @VGS = 10V
MOSFET MAXIMUM RATING (Ta=25 Unless otherwise noted)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Drain-Source Voltage
Gate-Source Voltage
Drain Current
DC
Pulsed (Note 1)
Drain-Source Diode Forward Current
Drain Power Dissipation
Maximum Junction Temperature
Storage Temperature Range
VDSS
VGSS
ID*
IDP
IS
PD* 25
Tj
Tstg
75
25
80
320
80
300
-55 175
-55 175
V
V
A
A
A
W
Note1) Pulse Test : Pulse width 10 S Duty cycle 1%
Thermal Characteristics
CHARACTERISTIC
SYMBOL
RATING
UNIT
Thermal Resistance, Junction-to-Ambient RthJA 62.5 /W
Thermal Resistance, Junction-to-Case
RthJC
0.5
/W
Equivalent Circuit
D
KMB080N75PA
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
A
E
I
K
M
D
NN
F
G
B
Q
L
J
O
C
P
H
123
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 9.9 +_ 0.2
B 15.95 MAX
C 1.3+0.1/-0.05
D 0.8 +_ 0.1
E 3.6 +_ 0.2
F 2.8 +_ 0.1
G 3.7
H 0.5+0.1/-0.05
I 1.5
J 13.08 +_ 0.3
K 1.46
L 1.4 +_ 0.1
M 1.27 +_ 0.1
N 2.54 +_ 0.2
O 4.5 +_ 0.2
P 2.4 +_ 0.2
Q 9.2 +_ 0.2
TO-220AB
G
S
2007. 10. 31
Revision No : 2
1/6
1 page  
KMB080N75PA
- Gate Charge
ID
Schottky
Diode
VGS
-4.5V
0.8 x VDSS
1.0 mA
VGS
ID
VDS
Qgs Qgd
Qg
- Resistive Load Switching
Q
0.5 x VDSS
6Ω
10V VGS
RL
VDS
ton
td(on) tr
VDS
10%
VGS 90%
toff
td(off)
tf
- Single Pulsed Avalanche Energy
0.5 x VDSS
25Ω
10 V
VGS
BVDSS
L
IAS
VDS
VDD
1
EAS= 2
LIAS2
BVDSS
BVDSS - VDD
ID(t)
tp
2007. 10. 31
Revision No : 2
VDS(t)
Time
5/6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet KMB080N75PA.PDF ] | |
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