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PDF PESD5V0V1BLD Data sheet ( Hoja de datos )
| Número de pieza | PESD5V0V1BLD | |
| Descripción | Very low capacitance bidirectional ESD protection diode | |
| Fabricantes | NXP Semiconductors | |
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PESD5V0V1BLD
Very low capacitance bidirectional ESD protection diode
Rev. 1 — 7 December 2010
Product data sheet
1. Product profile
1.1 General description
Very low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode
designed to protect one signal line from the damage caused by ESD and other transients.
The device is housed in a SOD882D leadless ultra small Surface-Mounted Device (SMD)
plastic package with visible and solderable side pads.
1.2 Features and benefits
Bidirectional ESD protection of one line Low clamping voltage: VCL = 12.5 V
Ultra small SMD plastic package
Ultra low leakage current: IRM < 1 nA
Solderable side pads
ESD protection up to 30 kV
Package height typ. 0.37 mm
IEC 61000-4-2; level 4 (ESD)
Very low diode capacitance: Cd = 11 pF IEC 61000-4-5 (surge); IPP = 4.8 A
Max. peak pulse power: PPP = 45 W AEC-Q101 qualified
1.3 Applications
Computers and peripherals
Audio and video equipment
Cellular handsets and accessories
Subscriber Identity Module (SIM) card
protection
Communication systems
Portable electronics
10/100 Mbit/s Ethernet
FireWire
1.4 Quick reference data
Table 1. Quick reference data
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
VRWM
reverse standoff voltage
Cd diode capacitance
f = 1 MHz; VR = 0 V
Min Typ Max Unit
- - 5V
- 11 13 pF
1 page  
NXP Semiconductors
103
PPP
(W)
102
PESD5V0V1BLD
Very low capacitance bidirectional ESD protection diode
006aab606
1.2
PPP
PPP(25°C)
0.8
001aaa193
10 0.4
1
1 10 102 103
tp (μs)
0
0 50 100 150 200
Tj (°C)
Fig 4.
Tamb = 25 °C
Peak pulse power as a function of exponential
pulse duration; typical values
Fig 5.
Relative variation of peak pulse power as a
function of junction temperature; typical
values
12
Cd
(pF)
10
006aab607
103
IRM
IRM(25°C)
102
10
006aab608
1
8
10−1
6
012345
VR (V)
Fig 6.
f = 1 MHz; Tamb = 25 °C
Diode capacitance as a function of reverse
voltage; typical values
10−2
−100
−50
0
50 100 150
Tj (°C)
Fig 7.
Relative variation of reverse leakage current
as a function of junction temperature; typical
values
PESD5V0V1BLD
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 7 December 2010
© NXP B.V. 2010. All rights reserved.
5 of 14
5 Page 
NXP Semiconductors
PESD5V0V1BLD
Very low capacitance bidirectional ESD protection diode
12. Revision history
Table 10. Revision history
Document ID
Release date
PESD5V0V1BLD v.1
20101207
Data sheet status
Product data sheet
Change notice
-
Supersedes
-
PESD5V0V1BLD
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 7 December 2010
© NXP B.V. 2010. All rights reserved.
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