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PDF RIC7S113A4 Data sheet ( Hoja de datos )

Número de pieza RIC7S113A4
Descripción RADIATION HARDENED HIGH AND LOW SIDE GATE DRIVER
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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PD-97826
RIC7S113A4
RADIATION HARDENED HIGH AND LOW SIDE GATE DRIVER
Features
Product Summary
n Total dose capability to 100 kRads(Si)
n Floating channel designed for bootstrap operation
n Fully operational to +400V
n Tolerant to negative transient voltage
n dV/dt immune
n Gate drive supply range from 10 to 20V
n Undervoltage lockout for both channels
n Separate logic supply range from 5 to 20V
Logic and power ground ±5V offset
n CMOS Schmitt-triggered inputs with pull-down
n Cycle by cycle edge-triggered shutdown logic
n Matched propagation delay for both channels
n Outputs in phase with inputs
n Hermetically Sealed
n Lightweight
Absolute Maximum Ratings
VOFFSET
IO+/-
VOUT
ton/off (typ.)
Delay Matching(typ.)
400V max.
2A / 2A
10 - 20V
120 & 100 ns
5 ns
Description
The RIC7S113A4 is a high voltage, high speed power
MOSFET and IGBT driver with independent high and low
side referenced output channels. Proprietary HVIC and
latch immune CMOS technologies enable ruggedized
monolithic construction. Logic inputs are compatible with
standard CMOS or LSTTL outputs. The output drivers
feature a high pulse current buffer stage designed for
minimum driver cross-conduction. Propagation delays are
matched to simplify use in high frequency applications.
The floating channel can be used to drive an N-channel
power MOSFET or IGBT in the high side configuration
which operates up to 400 volts.
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are
absolute voltages referenced to COM. The Thermal Resistance and Power Dissipation ratings are measured under board
mounted and still air conditions.
Symbol
Parameter
VB
VS
VHO
VCC
VLO
VDD
VSS
VIN
dVs/dt
PD
RthJC
RthJ-LEAD
RthJ-LID
TJ
TS
TL
High Side Floating Supply Voltage
High Side Floating Supply Offset Voltage
High Side Floating Output Voltage
Low Side Fixed Supply Voltage
Low Side Output Voltage
Logic Supply Voltage
Logic Supply Offset Voltage
Logic Input Voltage (HIN, LIN & SD)
Allowable Offset Supply Voltage Transient (Figure 2)
Package Power Dissipation @ TLEAD +25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Lead *
Thermal Resistance, Junction to Lid *
Junction Temperature
Storage Temperature
Lead Temperature (Soldering, 10 seconds)
Weight
* Guaranteed by design, not tested
www.irf.com
Min. Max.
-0.5 VS + 20
— 400
VS - 0.5
-0.5
VB + 0.5
20
-0.5
-0.5
VCC - 20
VSS - 0.5
—
VCC + 0.5
VSS + 20
VCC + 0.5
VDD + 0.5
50
— 0.8
12 (Typ)
15.9
150 (Typ)
—
27 (Typ)
—
-55 125
-55 150
— 300
0.6(typical)
Units
V
V/ns
W
°C/W
°C
g
1
08/14/15

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RIC7S113A4 pdf
Radiation characteristics
RIC7S113A4
International Rectifier radiation hardened Gate Drivers have been characterized in heavy ion environment
for Single Event Effects (SEE). Single Event Effects characterization data is illustrated in Table and Curve
below. For Static Bias Test Conditions refer to Figure 8.
Single Event Effect Safe Operating Area
Ion LET Energy
(MeV/(mg/cm2)) (MeV)
Kr 27.2
1089
Xe 50.4
1618
Range
(µm)
143
128.7
VCC/VDD
20V
20V
VB = 10V
400
300
VS (V)
VB = 15V
400
175
VB = 17.5V
375
125
450
400
350
300
250
200
150
100
50
0
7.5
Static Bias
10 12.5 15 17.5 20
Bias VB (V)
Kr
Xe
www.irf.com
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