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Número de pieza | CHA7115-99F | |
Descripción | GaAs Monolithic Microwave IC | |
Fabricantes | United Monolithic Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de CHA7115-99F (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! CHA7115-99F
RoHS COMPLIANT
X-band High Power Amplifier
GaAs Monolithic Microwave IC
Description
Vg3 Vd3
The CHA7115 is a monolithic three-stage
GaAs high power amplifier designed for
X-band applications.
Vg2 Vd2
Vg1
The HPA provides typically 8W output power
associated to 36% power added efficiency at IN
OUT
4dBcomp and a high robustness on
mismatch load.
Vd1 Vd2
This device is manufactured using 0.25µm
Power pHEMT process, including, via holes
through the substrate and air bridges.
Vg3 Vd3
It is available in chip form.
Main Features
0.25µm Power pHEMT Technology
Frequency band: 8.5 – 11.5GHz
Output power : 39dBm @ 4dBcomp
High linear gain: > 27dB
High PAE : 37% @ 4dBcomp
Quiescent bias point: Vd=8V, Id=2.2A
Chip size: 4.59 x 3.31 x 0.07mm
44
42
40 Pout @ 4dBc
38
36
34
32 PAE @ 4dBc
30
28
26
24 Pulse : 25µs 10%
22
8 8.5 9 9.5 10 10.5
Frequency (GHz)
Linear Gain
11 11.5
12
Main Characteristics
Vd = 8V, Id (Quiescent) = 2.2A, Drain Pulse width = 25µs, Duty cycle = 10%
Symbol
Parameter
Min Typ
Fop Operating frequency range
8.5
PAE_4dB Power added efficiency @4dBcomp @ 20°C
37
P_4dB Output power @ 4dBcomp @ 20°C
39
G Small signal gain @ 20°C
27.5
Max
11.5
Unit
GHz
%
dBm
dB
ESD Protections: Electrostatic discharge sensitive device. Observe handling precautions!
Ref : DSCHA71151069 - 10 Mar 11
1/6 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
1 page X-band High Power Amplifier
Chip Mechanical Data and Pin references
CHA7115-99F
2 3 4 5 6 7 8 9 10 11 12
13
1
27 26 25 24 23 22 21 20
19
14 15
16
18 17
Chip width and length are given with a tolerance of +/- 35µm
Chip thickness
= 70µm +/- 10µm
RF pads (1, 16)
= 118 x 196µm²
DC pads wide (14, 18) = 186 x 100µm²
DC pads (others, 2 to 27) = 100 x 100µm²
Pin number
1
2, 5, 6, 7, 8, 11, 12, 20, 24, 25
3, 21
4, 9, 13, 15, 17, 19, 23, 27
10, 14, 18, 22,26
16
Pin name
IN
G
GR
GND
VD
OUT
Description
Input RF
NC
Gate supply voltage
Ground (NC)
Drain supply voltage
Output RF
Ref : DSCHA71151069 - 10 Mar 11
5/6
Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet CHA7115-99F.PDF ] |
Número de pieza | Descripción | Fabricantes |
CHA7115-99F | GaAs Monolithic Microwave IC | United Monolithic Semiconductors |
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