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Número de pieza | CHA3666 | |
Descripción | GaAs Monolithic Microwave IC | |
Fabricantes | United Monolithic Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de CHA3666 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! CHA3666
RoHS COMPLIANT
6-17GHz Low Noise Amplifier
GaAs Monolithic Microwave IC
Description
The CHA3666 is a two-stage self biased
wide band monolithic low noise amplifier.
VD1
The circuit is manufactured with a standard
pHEMT process: 0.25µm gate length, via
holes through the substrate, air bridges
and electron beam gate lithography.
RFin
VD2
RFout
UMS
P1 P2 N2
Main Features
24,0
■ Broadband performance 6-17GHz
■ 1.8dB noise figure
■ 26dBm 3rd order intercept point
■ 17dBm power at 1dB compression
■ 21dB gain
22,0
20,0
18,0
16,0
14,0
12,0
10,0
■ Low DC power consumption
8,0
6,0
4,0
2,0
0,0
Main Characteristics
4,00
Temp = +25°C, Vd1=Vd2= +4V Pads: P1, N2=GND
Gain
6,00 8,00
NF
10,00 12,00 14,00 16,00 18,00
Symbol
Parameter
NF Noise figure
G Gain
IP3 3rd order intercept point
Min Typ Max Unit
1.8 2 dB
19 21
dB
26 dBm
ESD Protections: Electrostatic discharge sensitive device observe handling precautions!
Ref. : DSCHA3666-8108 - 17 Apr 08
1/8 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
1 page 6-17GHz Low Noise Amplifier
CHA3666
Output power at 1dB compression gain versus frequency
20
19,5
19
18,5
18
17,5
17
16,5
16
15,5
15
14,5
14
13,5
13
12,5
12
5
* P1=P2=grounded
** P1=N2=grounded
• * typical consumption : 85mA
• ** typical consumption : 80mA
6 7 8 9 10 11 12 13 14 15 16 17
Frequency (GHz)
18
Ref. : DSCHA3666-8108 - 17 Apr 08
5/8 Specifications subject to change without notice
Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet CHA3666.PDF ] |
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CHA3666 | GaAs Monolithic Microwave IC | United Monolithic Semiconductors |
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