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PDF IPC60N04S4L-06 Data sheet ( Hoja de datos )
| Número de pieza | IPC60N04S4L-06 | |
| Descripción | Power-Transistor | |
| Fabricantes | Infineon | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IPC60N04S4L-06 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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OptiMOSTM-T2 Power-Transistor
Features
• N-channel Logic Level - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• Green product (RoHS compliant)
• 100% Avalanche tested
• Feasible for automatic optical inspection (AOI)
IPC60N04S4L-06
Product Summary
VDS
RDS(on)
ID
40 V
5.6 m
60 A
PG-TDSON-8-23
1
1
Type
IPC60N04S4L-06
Package
PG-TDSON-8-23
Marking
4N04L06
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
Pulsed drain current2)
Avalanche energy, single pulse
Avalanche current, single pulse
Gate source voltage
ID
I D,pulse
E AS
I AS
V GS
T C=25°C,
T J =175°C,
V GS=10V
T C=100 °C,
T J =175°C,
V GS=10 V
T C=25 °C
I D=30 A
-
-
Power dissipation
P tot
T C=25 °C,
T J =175°C
Operating and storage temperature T j, T stg -
Value
601)
Unit
A
581, 2)
240
120
60
±16
63
-55 ... +1753)
mJ
A
V
W
°C
Rev. 1.0
page 1
2015-05-22
1 page  
IPC60N04S4L-06
5 Typ. output characteristics
I D = f(V DS); T j = 25 °C
parameter: V GS
240
10 V 6 V
5V
200
160
6 Typ. drain-source on-state resistance
R DS(on) = (I D); T j = 25 °C
parameter: V GS
40
3V
3.5 V
4.5 V
30
120 20
80
40
0
0
4V
3.5 V
3V
123
VDS [V]
4
10
0
0
20 40
ID [A]
4V
4.5 V
5V
10 V
60
7 Typ. transfer characteristics
I D = f(V GS); V DS = 6V
parameter: T j
8 Typ. drain-source on-state resistance
R DS(on) = f(T j); I D = 100 A; V GS = 10 V
240
-55 °C 25 °C 175 °C
11
200
9
160
4.5 V
10 V
120 7
80
5
40
0
123456
VGS [V]
3
-60 -20 20
60 100 140 180
Tj [°C]
Rev. 1.0
page 5
2015-05-22
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IPC60N04S4L-06.PDF ] | |
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