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PDF IGW75N65H5 Data sheet ( Hoja de datos )
| Número de pieza | IGW75N65H5 | |
| Descripción | IGBT | |
| Fabricantes | Infineon | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IGW75N65H5 (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
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IGBT
Highspeed5IGBTinTRENCHSTOPTM5technology
IGW75N65H5
650VIGBThighspeedseriesfifthgeneration
Datasheet
IndustrialPowerControl
1 page  
IGW75N65H5
Highspeedseriesfifthgeneration
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
DynamicCharacteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from
case
Symbol Conditions
Cies
Coes VCE=25V,VGE=0V,f=1MHz
Cres
QG
VCC=520V,IC=75.0A,
VGE=15V
LE
min.
Value
typ.
max. Unit
- 3800 -
- 80 - pF
- 17 -
- 160.0 - nC
- 13.0 - nH
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
IGBTCharacteristic,atTvj=25°C
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tvj=25°C,
VCC=400V,IC=75.0A,
VGE=0.0/15.0V,
RG(on)=8.0Ω,RG(off)=8.0Ω,
Lσ=30nH,Cσ=25pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery. Diode
from IKW75N65EH5.
Tvj=25°C,
VCC=400V,IC=37.5A,
VGE=0.0/15.0V,
RG(on)=8.0Ω,RG(off)=8.0Ω,
Lσ=30nH,Cσ=25pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery. Diode
from IKW75N65EH5.
min.
Value
typ.
max. Unit
- 28 - ns
- 33 - ns
- 174 - ns
- 41 - ns
- 2.25 - mJ
- 0.95 - mJ
- 3.20 - mJ
- 25 - ns
- 14 - ns
- 178 - ns
- 18 - ns
- 0.90 - mJ
- 0.30 - mJ
- 1.20 - mJ
5 Rev.2.1,2015-05-20
5 Page 
IGW75N65H5
Highspeedseriesfifthgeneration
1E+4
Cies
Coes
Cres
1000
100
D = 0.5
0.1 0.2
0.1
0.05
0.02
0.01
single pulse
0.01
10
0 5 10 15 20 25 30
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 17. Typicalcapacitanceasafunctionof
collector-emittervoltage
(VGE=0V,f=1MHz)
0.001
1E-6
i: 1 2 3 4 5 6
ri[K/W]: 0.010336 0.078242 0.081139 0.196217 0.015938 1.8E-3
τi[s]: 2.8E-5 2.3E-4 2.3E-3 0.013145 0.113481 1.869237
1E-5
1E-4 0.001
0.01
tp,PULSEWIDTH[s]
0.1
Figure 18. IGBTtransientthermalimpedance
(D=tp/T)
11 Rev.2.1,2015-05-20
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet IGW75N65H5.PDF ] | |
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