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PDF R3117N191C Data sheet ( Hoja de datos )

Número de pieza R3117N191C
Descripción LOW VOLTAGE DETECTOR
Fabricantes RICOH 
Logotipo RICOH Logotipo



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R3117x SERIES
LOW VOLTAGE DETECTOR with SENSE pin
NO.EA-186-080617
OUTLINE
The R3117x series are CMOS-based voltage detector ICs with high detector threshold accuracy and ultra-low
supply current, which can be operated at an extremely low voltage and is used for system reset as an example.
Each of these ICs consists of a voltage reference unit, a comparator, resistors for detector threshold setting,
an output driver and a hysteresis circuit. The detector threshold is fixed with high accuracy internally and does
not require any adjustment.
The tolerance of the detector threshold is ±15mV (-VDET <= 1.5V) or ±1.0% (1.5V< -VDET). Since the sense pin is
separated from the VDD pin of the IC, therefore, even if the sense pin voltage becomes to 0V, the output voltage
keeps its "L" level.
Two output types, Nch open drain type and CMOS type are available.
Three types of packages, SOT-23-5, SC-88A, and DFN(PLP)1010-4 are available.
FEATURES
Supply Current ......................................................................Typ. 0.29µA (VDD=6.0V)
Consumption current through SENSE pin is not included.
Range of Operating Voltage..................................................1.0V to 6.0V (-40°C <= Topt <= 105°C)
Detector Threshold Range....................................................Stepwise setting with a step of 0.1V in the range
of 0.7V to 5.0V
Accuracy Detector Threshold................................................±1.0% (-VDET >= 1.6V), ±15mV (-VDET<1.6V)
Temperature-Drift Coefficient of Detector Threshold ............Typ. ±30ppm/°C
Output Types.........................................................................Nch Open Drain and CMOS
Packages ..............................................................................SOT-23-5, DFN(PLP)1010-4, SC-88A
Topt=25°C, unless otherwise noted.
APPLICATIONS
CPU and Logic Circuit Reset
Battery Checker
Window Comparator
Wave Shaping Circuit
Battery Back-up Circuit
Power Failure Detector
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R3117N191C pdf
R3117x
Symbol
Item
Conditions
Min. Typ. Max. Unit
-VDET < 1.5V
6 25
RSENSE Sense Resistor
1.5V <= -VDET < 4.7V
5 40 M
4.7V <= -VDET
10 40
VDD Operating Voltage
VDDL
Minimum Operating
Voltage*2
-40°C <= Topt <= 105°C
Topt=25°C
-40°C <= Topt <= 105°C
1.0 6.0 V
0.50
0.55
V
IOUT
Output Current
(Driver Output Pin)
ILEAK
Nch Driver Leakage
Current*4
Nch
Pch*3
VDD=0.6V, VDS=0.05V
-VDET < 1.1V
VDD=0.6V
VDS=0.5V
1.1V <= -VDET < 1.6V
VDD=1.0V
VDS=0.5V
1.6V <= -VDET < 3.1V
VDD=1.5V
VDS=0.5V
3.1V <= -VDET
VDD=3.0V
VDS=0.5V
-VDET < 4.0V
VDD=4.5V
VDS=2.1V
4.0V <= -VDET
VDD=6.0V
VDS=2.1V
VDD=6.0V, VDS=7.0V
7
0.020
0.400
1.000
2.400
0.650
0.900
µA
mA
mA
140 nA
-VDET/
Topt
Detector Threshold
Temperature
Coefficient
-40°C <= Topt <= 105°C
±30
ppm
/°C
tPHL
Detector Output Delay
Time*5
VDD=5V
-VDET < 1.5V
1.5V <= -VDET
80
40
µs
tPLH
Release Output Delay
Time*5
VDD=5V
-VDET < 4.5V
4.5V <= -VDET
40
80
µs
All of unit are tested and specified under load conditions such that Topt=25°C except for Detector Threshold
Temperature Coefficient, Detector Output Delay Time and Release Output Delay Time.
*1: Consumption current through SENSE pin is not included.
*2: In case that the VDD pin and SENSE pin are connected and the value shows the minimum supply voltage (VDD) when the
output voltage at detector threshold can be maintained as 0.1V or less. (In case of Nch open drain type, pull-up resistor
is 470kand pull-up voltage is set at 5V for testing.) If VDD is high enough, down to 0V is acceptable for SENSE pin.
*3: In case of CMOS type
*4: In case of Nch Open Drain type
*5: In the case of CMOS output type: Time interval from forcing pulsive 6.0V to -VDET-2.0V or 0V, or from forcing 0V to
-VDET+2.0V or 6.0V to SENSE pin, to when the output voltage will reach VDD/2.
In the case of Nch Open drain output type: Output pin is pulled up to 5V with 470kand time interval from forcing 6.0V
to -VDET-2.0V or 0V, or forcing pulsive 0V to -VDET+2.0V or 6.0V to when the output voltage reaches up to 2.5V.
RECOMMENDED OPERATING CONDITIONS (ELECTRICAL CHARACTERISTICS)
All of electronic equipment should be designed that the mounted semiconductor devices operate within the
recommended operating conditions. The semiconductor devices cannot operate normally over the
recommended operating conditions, even if when they are used over such conditions by momentary
electronic noise or surge. And the semiconductor devices may receive serious damage when they continue
to operate over the recommended operating conditions.
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R3117N191C arduino
R3117x
Power supply injection order
The R3117xxxxA/C Series supervise the voltage of the SENSE pin. VDD pin and SENSE pin can be used at the
same voltage level. Likewise, VDD pin and SENSE pin can be used at the different voltage level. If the VDD pin and
SENSE pin are used at different voltage level, regarding the start-up sequence, force the voltage level to VDD pin
prior to the SENSE pin.
If the SENSE pin voltage is equal or more than the released voltage (+VDET), DOUT pin becomes "H". Besides, a
voltage beyond VDD pin is also acceptable to SENSE pin. Concerning the R3117xxxxA series (Nch open drain
output type), DOUT pin must be pulled-up with an external resistor.
VDD
VSENSE
+VDET
VOUT
Fig.1 Turn on sequence
t
Outside setting of the detection voltage
To monitor the voltage more than 5.0V or if the different detector threshold with using lower threshold device,
divider resistors can be applied to the SENSE pin. In this usage, some error range will be generated to the
detector threshold voltage caused by the internal resistor RSENSE (Fig.3) of the IC. Supposed that the detector
threshold voltage is described as Vs, the next equation will be true.
VS = -VDET × (Ra+Rb)/Rb.
However, actually an error includes by SENSE resistance (RSENSE) of the IC inside. (Figure 3)
Ia = Ib + ISENSE
.......................................(1)
Ib = -VDET / Rb
.......................................(2)
Thus,
Ia = -VDET / Rb + ISENSE .......................................(3)
Therefore,
VS = -VDET + Ia × Ra .......................................(4)
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