|
|
PDF SA636 Data sheet ( Hoja de datos )
| Número de pieza | SA636 | |
| Descripción | Low voltage high performance mixer FM IF system | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de SA636 (archivo pdf) en la parte inferior de esta página. Total 30 Páginas | ||
|
No Preview Available !
SA636
Low voltage high performance mixer FM IF system
with high-speed RSSI
Rev. 6 — 5 December 2012
Product data sheet
1. General description
The SA636 is a low-voltage high performance monolithic FM IF system with high-speed
RSSI incorporating a mixer/oscillator, two limiting intermediate frequency amplifiers,
quadrature detector, logarithmic Received Signal Strength Indicator (RSSI), voltage
regulator, wideband data output and fast RSSI op amps. The SA636 is available in
20-lead SSOP (Shrink Small Outline Package) and HVQFN20 (quad flat package).
The SA636 was designed for high bandwidth portable communication applications and
will function down to 2.7 V. The RF section is similar to the famous SA605. The data
output has a minimum bandwidth of 600 kHz. This is designed to demodulate wideband
data. The RSSI output is amplified. The RSSI output has access to the feedback pin. This
enables the designer to adjust the level of the outputs or add filtering.
SA636 incorporates a power-down mode which powers down the device when
POWER_DOWN_CTRL pin is LOW. Power-down logic levels are CMOS and TTL
compatible with high input impedance.
2. Features and benefits
Wideband data output (600 kHz minimum)
Fast RSSI rise and fall times
Low power consumption: 6.5 mA typical at 3 V
Mixer input to >500 MHz
Mixer conversion power gain of 11 dB at 240 MHz
Mixer noise figure of 12 dB at 240 MHz
XTAL oscillator effective to 150 MHz (LC oscillator to 1 GHz local oscillator can be
injected)
92 dB of IF amp/limiter gain
25 MHz limiter small signal bandwidth
Temperature compensated logarithmic Received Signal Strength Indicator (RSSI) with
a dynamic range in excess of 90 dB
RSSI output internal op amp
Internal op amps with rail-to-rail outputs
Low external component count; suitable for crystal/ceramic/LC filters
Excellent sensitivity: 0.54 V into 50 matching network for 12 dB SINAD
(Signal-to-Noise And Distortion ratio) for 1 kHz tone with RF at 240 MHz and IF at
10.7 MHz
10.7 MHz filter matching (330 )
Power-down mode (ICC = 200 A)
1 page  
NXP Semiconductors
SA636
Low voltage high performance mixer FM IF system
6.2 Pin description
Table 2. Pin description
Symbol
Pin
SSOP20
RF_IN
1
RF_IN_DECOUPL
2
OSC_OUT
3
OSC_IN
4
VCC
RSSI_FEEDBACK
5
6
RSSI_OUT
7
POWER_DOWN_CTRL 8
DATA_OUT
9
QUADRATURE_IN
10
LIMITER_OUT
11
LIMITER_DECOUPL 12
LIMITER_DECOUPL 13
LIMITER_IN
14
GND
15
IF_AMP_OUT
16
IF_AMP_DECOUPL
17
IF_AMP_IN
18
IF_AMP_DECOUPL
19
MIXER_OUT
20
--
Description
HVQFN20
19 RF input
20 RF input decoupling pin
1 oscillator output (emitter)
2 oscillator input (base)
3 positive supply voltage
4 RSSI amplifier negative feedback terminal
5 RSSI output
6 power-down control; active HIGH
7 data output
8 quadrature detector input terminal
9 limiter amplifier output
10 limiter amplifier decoupling pin
11 limiter amplifier decoupling pin
12 limiter amplifier input
13[1]
ground; negative supply
14 IF amplifier output
15 IF amplifier decoupling pin
16 IF amplifier input
17 IF amplifier decoupling pin
18 mixer output
DAP
exposed die attach paddle; connect to ground
[1] For the HVQFN20 package, the exposed die attach paddle must be connected to device ground pin 13 and
the PCB ground plane. GND pin must be connected to supply ground for proper device operation. For
enhanced thermal, electrical, and board level performance, the exposed pad needs to be soldered to the
board using a corresponding thermal pad on the board and for proper heat conduction through the board,
thermal vias need to be incorporated in the printed-circuit board in the thermal pad region.
SA636
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 6 — 5 December 2012
© NXP B.V. 2012. All rights reserved.
5 of 31
5 Page 
NXP Semiconductors
SA636
Low voltage high performance mixer FM IF system
12. Dynamic characteristics
Table 7. Dynamic characteristics
Tamb = 25 C; VCC = +3 V, unless otherwise stated. RF frequency = 240.05 MHz + 14.5 dBV RF input step-up;
IF frequency = 10.7 MHz; RF level = 45 dBm; FM modulation = 1 kHz with 125 kHz peak deviation. Audio output with
C-message weighted filter and de-emphasis capacitor. Test circuit Figure 19. The parameters listed below are tested using
automatic test equipment to assure consistent electrical characteristics. The limits do not represent the ultimate performance
limits of the device. Use of an optimized RF layout will improve many of the listed parameters.
Symbol Parameter
Conditions
Min Typ Max Unit
Mixer/oscillator section (external LO = 160 mV RMS value)
fi input frequency
fosc oscillator frequency
NF noise figure
external oscillator (buffer)
at 240 MHz
- 500 - MHz
- 500 - MHz
- 12 - dB
IP3i
input third-order intercept point
matched f1 = 240.05 MHz;
f2 = 240.35 MHz
- 16 - dBm
Gp(conv)
Ri(RF)
Ci(RF)
Ro(mix)
IF section
conversion power gain
RF input resistance
RF input capacitance
mixer output resistance
matched 14.5 dBV step-up
single-ended input
MIXER_OUT pin
8 11 14 dB
- 700 -
- 3.5 - pF
---
Gamp(IF)
Glim
Pi(IF)
IF amplifier gain
limiter gain
IF input power
330 load
330 load
for 3 dB input limiting sensitivity;
test at IF_AMP_IN pin
-
-
-
38
54
105
-
-
-
dB
dB
dBm
AM
Vo(RMS)
B3dB
SINAD
AM rejection
RMS output voltage
3 dB bandwidth
signal-to-noise-and-distortion ratio
80 % AM 1 kHz
RL = 100 k
RF level = 111 dBm
- 40 -
120 130 -
600 700 -
- 16 -
dB
mV
kHz
dB
THD
total harmonic distortion
- 43 38 dB
S/N signal-to-noise ratio
no modulation for noise
- 60 - dB
Vo(RSSI) RSSI output voltage
IF with buffer
IF level = 118 dBm
- 0.2 0.5 V
IF level = 68 dBm
0.3 0.6 1.0 V
IF level = 10 dBm
0.9 1.3 1.8 V
tr(o) output rise time
IF RSSI output; 10 kHz pulse;
no 10.7 MHz filter;
no RSSI bypass capacitor;
IF frequency = 10.7 MHz
RF level = 56 dBm
- 1.2 - s
RF level = 28 dBm
- 1.1 - s
tf(o) output fall time
IF RSSI output; 10 kHz pulse;
no 10.7 MHz filter;
no RSSI bypass capacitor;
IF frequency = 10.7 MHz
RF level = 56 dBm
- 2.0 - s
RF level = 28 dBm
- 7.3 - s
SA636
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 6 — 5 December 2012
© NXP B.V. 2012. All rights reserved.
11 of 31
11 Page | ||
| Páginas | Total 30 Páginas | |
| PDF Descargar | [ Datasheet SA636.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| SA630 | Single pole double throw SPDT switch |  Philips |
| SA630 | Single-Pole Double-Throw (SPDT) switch | NXP Semiconductors |
| SA631 | 1GHz low voltage LNA and mixer | Philips |
| SA636 | Low voltage high performance mixer FM IF system with high-speed RSSI | Philips |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |