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PDF RB751V-40 Data sheet ( Hoja de datos )

Número de pieza RB751V-40
Descripción 200mW SOD-323 SURFACE MOUNT
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No Preview Available ! RB751V-40 Hoja de datos, Descripción, Manual

DATA SHEET
SEMICONDUCTOR
RB751V-40
200mW SOD-323 SURFACE MOUNT
Very Small Outline Flat Lead Plastic Package
Schottky Barrier Diode
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
H
SOD-323 Flat Lead
PD Power Dissipation
200 mW
TSTG
Storage Temperature Range
-55 to +125
°C
TJ Operating Junction Temperature
+125
°C
VRRM
Repetitive Peak Reverse Voltage
40 V
VR Reverse Voltage
30 V
IF Forward Current
30 mA
IFSM Non-Repetitive Peak Forward Current
500
mA
These ratings are limiting values above which the serviceability of the diode may be impaired.
DEVICE MARKING CODES:
Specification Features:
ƒ Low Forward Voltage Drop
ƒ Flat Lead SOD-323 Small Outline Plastic Package
ƒ Surface Device Type Mounting
ƒ Matte Tin(Sn) Lead Finish
ƒ Pb free product at available : 99% Sn above meet RoHS environment
ƒ Band Indicates Cathode
ƒ ESD Rating:
Human Body Model, Class 2.
Machine Model, Class C.
Device Type
RB751V-40
Device Marking
B5
Anode
ELECTRICAL SYMBOL
Electrical Characteristics
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Condition
Limits
Min Max
Unit
BV Breakdown Voltage
IR=10µA 30 Volts
IR Reverse Leakage Current
VR=30V
0.5 µA
VF Forward Voltage
TCBAT42WS,
IF=1mA
0.37
Volts
http://www.yeashin.com
1
REV.02 20120305

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