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PDF KF3N50IZ Datasheet ( Hoja de datos )

Número de pieza KF3N50IZ
Descripción N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Fabricantes KEC 
Logotipo KEC Logotipo

Total 6 Páginas
		
KF3N50IZ Hoja de datos, Descripción, Manual
SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, fast reverse recovery time, low on resistance, low gate
charge and excellent avalanche characteristics. It is mainly suitable for
electronic ballast and switching mode power supplies.
FEATURES
VDSS= 500V, ID= 2.5A
Drain-Source ON Resistance : RDS(ON)=2.5
Qg(typ) = 7.50nC
(Max) @VGS = 10V
KF3N50DZ/IZ
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
KF3N50DZ
A
CD
B
H
G
FF
J
E
K
L
N
M
DIM MILLIMETERS
A 6.60 +_ 0.20
B 6.10 +_0.20
C 5.34 +_ 0.30
D 0.70 +_0.20
E 2.70 +_ 0.15
F 2.30 +_0.10
G 0.96 MAX
H 0.90 MAX
J 1.80 +_0.20
K 2.30 +_0.10
L 0.50 +_ 0.10
M 0.50 +_0.10
N 0.70 MIN
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
VDSS
VGSS
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
ID
IDP
EAS
EAR
dv/dt
Drain Power
Dissipation
Tc=25
Derate above 25
PD
Maximum Junction Temperature
Storage Temperature Range
Tj
Tstg
Thermal Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-
Ambient
RthJC
RthJA
PIN CONNECTION
(KF3N50DZ/IZ)
D
RATING
500
30
2.5
1.5
7
110
4
10
40
0.32
150
-55 150
3.1
110
UNIT
V
V
A
mJ
mJ
V/ns
W
W/
/W
/W
123
1. GATE
2. DRAIN
3. SOURCE
DPAK (1)
KF3N50IZ
AH
CJ
M
N
G
FF
123
P
L
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 6.6+_0.2
B 6.1+_0.2
C 5.34 +_0.3
D 0.7+_0.2
E 9.3 +_0.3
F 2.3+_ 0.2
G 0.76+_0.1
H 2.3+_0.1
J 0.5+_ 0.1
K 1.8 +_ 0.2
L 0.5 +_ 0.1
M 1.0 +_ 0.1
N 0.96 MAX
P 1.02 +_ 0.3
IPAK(1)
G
S
2010. 11. 29
Revision No : 0
1/6

1 page

KF3N50IZ pdf
KF3N50DZ/IZ
Fig12. Gate Charge
ID
Fast
Recovery
Diode
VGS
10 V
0.8 VDSS
1.0 mA
VGS
ID
VDS
Qgs
Qgd
Qg
Fig13. Single Pulsed Avalanche Energy
50V
25
10 V
VGS
BVDSS
L
IAS
VDS
VDD
EAS=
1
2
LIAS2
BVDSS
BVDSS - VDD
ID(t)
Fig14. Resistive Load Switching
0.5 VDSS
25
10V VGS
tp
VDS
90%
RL
VDS
VGS 10%
td(on) tr
ton
td(off)
tf
toff
Q
VDS(t)
Time
2011. 5. 23
Revision No : 0
5/6

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