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PDF S2ABF Data sheet ( Hoja de datos )

Número de pieza S2ABF
Descripción SURFACE MOUNT GENERAL PURPOSE SILICON RECTIFIER
Fabricantes MDD 
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S2ABF THRU S2MBF
SURFACE MOUNT GENERAL PURPOSE SILICON RECTIFIER
Reverse Voltage - 50 to 1000 Volts Forward Current - 2.0 Amperes
0.146(3.70)
0.138(3.50)
0.051(1.30)
0.043(1.10)
SMBF
Cathode Band
Top View
0.086(2.20)
0.075(1.90)
0.173(4.4)
0.165(4.2)
0.010(0.26)
0.0071(0.18)
FEATURES
For surface mounted applications
Low profile package
Glass Passivated Chip Junction
Easy to pick and place
Lead free in comply with EU RoHS 2011/65/EU diretives
0.051(1.30)
0.039(1.0)
MECHANICAL DATA
0.216(5.5)
0.200(5.1)
Case: JEDEC SMBF molded plastic body
Terminals: leads solderable per MIL-STD-750,
Method 2026
Mounting Position: Any
Weight:57mg/0.002oz
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
MDD Catalog Number
Marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at TL=65 C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 2.0A
Maximum DC reverse current TA=25 C
at rated DC blocking voltage TA=125 C
Typical junction capacitance (NOTE 1)
SYMBOLS S2ABF S2BBF
VRRM
VRMS
VDC
S2AB
50
35
50
S2BB
100
70
100
I(AV)
IFSM
VF
IR
CJ
S2DBF S2GBF S2JBF
S2DB S2GB S2JB
200 400
140 280
200 400
600
420
600
2.0
60
1.1
5.0
100.0
30
S2KBF
S2KB
800
560
800
S2MBF
S2MB
1000
700
1000
UNITS
VOLTS
VOLTS
VOLTS
Amps
Amps
Volts
µA
pF
Typical thermal resistance (NOTE 2)
RθJA
Operating junction and storage temperature range TJ,TSTG
Note: 1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2.P.C.B. mounted with 0.5x0.5(12.7x12.7mm) copper pad areas
55
-55 to +150
C/W
C

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