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PDF TC7SG32FE Data sheet ( Hoja de datos )

Número de pieza TC7SG32FE
Descripción 2 Input OR Gate
Fabricantes Toshiba 
Logotipo Toshiba Logotipo



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No Preview Available ! TC7SG32FE Hoja de datos, Descripción, Manual

TC7SG32FE
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7SG32FE
2-Input OR Gate
Features
High output current
: ±8 mA (min) at VCC = 3.0 V
Super high speed operation : tpd = 2.4 ns (typ.)
at VCC = 3.3 V,15pF
Operating voltage range : VCC = 0.9 to 3.6 V
5.5-V tolerant inputs
3.6-V power down protection output
Weight: 0.003 g (typ.)
(ESV)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Supply voltage
DC input voltage
DC output voltage
Input diode current
Output diode current
DC output current
DC VCC/ground current
Power dissipation
Storage temperature
Symbol
VCC
VIN
VOUT
IIK
IOK
IOUT
ICC
PD
Tstg
Rating
Unit
0.5 to 4.6
0.5 to 7.0
0.5 to 4.6 (Note 1)
0.5 to VCC + 0.5 (Note 2)
20
20 (Note 3)
±25
±50
150
65 to 150
V
V
V
mA
mA
mA
mA
mW
°C
Marking
W4
Product Name
Pin Assignment (top view)
IN B 1
IN A 2
GND 3
5 VCC
4 OUT Y
Note:
Note 1:
Note 2:
Note 3:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
VCC = 0V
High or Low state. Do not exceed IOUT of absolute maximum ratings.
VOUT < GND
1 2009-09-09

1 page




TC7SG32FE pdf
Package Dimensions
TC7SG32FE
Weight: 0.003 g (typ.)
5 2009-09-09

5 Page










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