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PDF 2N7002KDW-AU Data sheet ( Hoja de datos )
| Número de pieza | 2N7002KDW-AU | |
| Descripción | 60V N-Channel Enhancement Mode MOSFET | |
| Fabricantes | Pan Jit International | |
| Logotipo |  |
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2N7002KDW-AU
60V N-Channel Enhancement Mode MOSFET - ESD Protected
FEATURES
• RDS(ON), VGS@10V,IDS@500mA=3Ω
• RDS(ON), VGS@4.5V,IDS@200mA=4Ω
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Very Low Leakage Current In Off Condition
• Specially Designed for Battery Operated Systems, Solid-State Relays
Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
• ESD Protected 2KV HBM
• Acqire quality system certificate : TS16949
• AEC-Q101 qualified
• Lead free in compliance with EU RoHS 2011/65/EU directive
• Green molding compound as per IEC61249 Std. . (Halogen Free)
MECHANICAL DATA
• Case: SOT-363 Package
• Terminals: Solderable per MIL-STD-750,Method 2026
• Approx. Weight: 0.0002 ounces, 0.006 grams
• Marking: K27
Maximum RATINGS and Thermal Characteristics (T =25OC unless otherwise noted )
A
654
123
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous D rain C urrent
ID
Pulsed Drain Current 1)
Maximum Power Dissipation
Operating Junction and Storage
Temp er at ur e R a ng e
T A= 2 5 OC
T A= 7 5 OC
Junction-to Ambient Thermal Resistance
(PCB mounted)2
I DM
PD
TJ, TSTG
RθJA
Limit
60
+20
115
800
200
120
-55 to +150
625
Note:1.Maximum DC current limited by the package
2.Surface mounted on FR4 board, t<10 sec
3.Pulse width<300us, Duty cycle<2%
Uni t s
V
V
mA
mA
mW
OC
OC/W
May 13,2015-REV.03
PAGE . 1
1 page  
2N7002KDW-AU
MOUNTING PAD LAYOUT
0.018
(0.45)
ORDER INFORMATION
• Packing information
T/R - 10K per 13" plastic Reel
T/R - 3K per 7" plastic Reel
0.026
(0.65)
0.026
(0.65)
May 13,2015-REV.03
PAGE . 5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet 2N7002KDW-AU.PDF ] | |
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| 2N7002KDW-AU | 60V N-Channel Enhancement Mode MOSFET | Pan Jit International |
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