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PDF BLM2006NE Data sheet ( Hoja de datos )

Número de pieza BLM2006NE
Descripción N-Channel Enhancement Mode Power MOSFET
Fabricantes BELLING 
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No Preview Available ! BLM2006NE Hoja de datos, Descripción, Manual

N-Channel Enhancement Mode Power MOSFET
Pb Free Product
BLM2006NE
Description
The BLM2006NE uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
load switch or in PWM applications .It is ESD protested.
General Features
VDS = 20V,ID =7A
RDS(ON) < 27mΩ @ VGS=2.5V
RDS(ON) < 21mΩ @ VGS=4.5V
ESD Rating: 2000V HBM
High Power and current handing capability
Lead free product is acquired
Surface Mount Package
Application
PWM application
Load switch
Schematic diagram
Marking and pin Assignment
SOT23-6L top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
2006NE
BLM2006NE
SOT23-6L
Reel Size
Ø330mm
Tape width
12mm
Quantity
3000 units
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
20
±12
7
30
1.25
-55 To 150
Unit
V
V
A
A
W
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
100 /W
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BLM2006NE pdf
Pb Free Product
BLM2006NE
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
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