(PDF) IPS65R600E6 Datasheet - MOSFET ( Transistor )

Número de pieza	IPS65R600E6
Descripción	MOSFET ( Transistor )
Fabricantes	Infineon
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No Preview Available ! MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS™E6 650VCoolMOS™E6PowerTransistor lPS65R600E6 DataSheet Rev.2.0 Final PowerManagement&Multimarket 1 page 650VCoolMOS™E6PowerTransistor IPS65R600E6 3Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case RthJC Thermal resistance, junction - ambient RthJA Soldering temperature, wavesoldering only allowed at leads Tsold Min. - - Values Typ. Max. -2 - 62 Unit Note/TestCondition °C/W - °C/W leaded - - 260 °C 1.6mm (0.063 in.) from case for 10s Final Data Sheet 5 Rev.2.0,2015-04-23 5 Page 650VCoolMOS™E6PowerTransistor IPS65R600E6 Diagram13:Drain-sourcebreakdownvoltage 740 Diagram14:Typ.capacitances 104 720 700 103 Ciss 680 660 102 640 Coss 620 101 600 Crss 580 -75 -50 -25 0 25 50 75 100 125 150 175 Tj[°C] 100 0 100 200 300 400 500 VDS[V] VBR(DSS)=f(Tj);ID=1.0mA C=f(VDS);VGS=0V;f=1MHz Diagram15:Typ.Cossstoredenergy 2.5 2.0 1.5 1.0 0.5 0.0 0 100 200 300 400 500 VDS[V] Eoss=f(VDS) Final Data Sheet 11 Rev.2.0,2015-04-23 11 Page

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PDF IPS65R600E6 Data sheet ( Hoja de datos )