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PDF IPB60R380P6 Data sheet ( Hoja de datos )

Número de pieza IPB60R380P6
Descripción MOSFET ( Transistor )
Fabricantes Infineon 
Logotipo Infineon Logotipo



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No Preview Available ! IPB60R380P6 Hoja de datos, Descripción, Manual

MOSFET
MetalOxideSemiconductorFieldEffectTransistor
CoolMOS™P6
600VCoolMOS™P6PowerTransistor
IPx60R380P6
DataSheet
Rev.2.2
Final
PowerManagement&Multimarket

1 page




IPB60R380P6 pdf
600VCoolMOS™P6PowerTransistor
IPB60R380P6,IPP60R380P6,IPA60R380P6,
IPD60R380P6
3Thermalcharacteristics
Table3Thermalcharacteristics(NonFullPAK)TO-220
Parameter
Symbol
Values
Min. Typ. Max.
Thermal resistance, junction - case RthJC
Thermal resistance, junction - ambient RthJA
- - 1.5
- - 62
Soldering temperature, wavesoldering
only allowed at leads
Tsold
- - 260
Unit Note/TestCondition
°C/W -
°C/W leaded
°C 1.6mm (0.063 in.) from case for 10s
Table4Thermalcharacteristics(FullPAK)TO-220FP
Parameter
Symbol
Values
Min. Typ. Max.
Thermal resistance, junction - case RthJC
--4
Thermal resistance, junction - ambient RthJA
- - 80
Soldering temperature, wavesoldering
only allowed at leads
Tsold
- - 260
Unit Note/TestCondition
°C/W -
°C/W leaded
°C 1.6mm (0.063 in.) from case for 10s
Table5ThermalcharacteristicsTO-252,TO-263
Parameter
Symbol
Values
Min. Typ. Max.
Thermal resistance, junction - case RthJC
- - 1.5
Thermal resistance, junction - ambient RthJA
- - 62
Thermal resistance, junction - ambient
for SMD version
RthJA
- 35 45
Soldering temperature, wave & reflow
soldering allowed
Tsold
- - 260
Unit Note/TestCondition
°C/W -
°C/W device on PCB, minimal footprint
Device on 40mm*40mm*1.5mm
epoxy PCB FR4 with 6cm² (one
°C/W
layer, 70µm thickness) copper area
for drain connection and cooling.
PCB is vertical without air stream
cooling.
°C reflow MSL1
Final Data Sheet
5 Rev.2.2,2015-07-10

5 Page





IPB60R380P6 arduino
600VCoolMOS™P6PowerTransistor
IPB60R380P6,IPP60R380P6,IPA60R380P6,
IPD60R380P6
Diagram13:Typ.transfercharacteristics
30
25
20
15
10
5
0
0246
VGS[V]
ID=f(VGS);VDS=20V;parameter:Tj
8
25 °C
Diagram14:Typ.gatecharge
10
9
8
7
120 V
480 V
6
150 °C
5
4
3
2
1
10 12
0
0
5 10 15
Qgate[nC]
VGS=f(Qgate);ID=4.8Apulsed;parameter:VDD
20
Diagram15:Forwardcharacteristicsofreversediode
102
Diagram16:Avalancheenergy
225
200
175
101 150
125 °C
25 °C
125
100
100 75
50
25
10-1
0.0
0.5
IF=f(VSD);parameter:Tj
1.0
VSD[V]
1.5
0
2.0 25 50 75 100 125 150
Tj[°C]
EAS=f(Tj);ID=1.8A;VDD=50V
Final Data Sheet
11 Rev.2.2,2015-07-10

11 Page







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