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PDF GTVA221701FA Data sheet ( Hoja de datos )
| Número de pieza | GTVA221701FA | |
| Descripción | Thermally-Enhanced High Power RF GaN HEMT | |
| Fabricantes | Infineon | |
| Logotipo |  |
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GTVA221701FA
advance specification
Thermally-Enhanced High Power RF GaN HEMT
170 W, 50 V, 1805 – 2170 MHz
Description
The GTVA221701FA is a 170-watt (P3dB) GaN high electron mobility
transistor (HEMT) for use in multi-standard cellular power amplifier
applications. It features input matching, high efficiency, and a
thermally-enhanced package with earless flange.
Features
• Input matched
• Typical Pulsed CW performance, 1805 MHz, 48 V, single side
- Output power at P3dB = 200 W
- Efficiency = 70%
- Gain = 18 dB
• Capable of handling 10:1 VSWR @48 V, 140 W (CW) output
power
• GaN HEMT technology
• High power density
• High efficiency
• RoHS-compliant
Advance Specification Data
Sheets describe products that
are being considered by Infineon
for development and market intro-
duction. The target performance
shown in Advance Specifications
is not final and should not be used
for any design activity. Please
contact Infineon about the future
availability of these products.
GTVA261701FA
Package H-37265J-2
Target RF Characteristics
Single- carrier WCDMA Specifications (tested in Infineon test fixture)
VDD = 48 V, IDQ = 300 mA, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 9.9 dB @ 0.01% CCDF
Characteristics
Conditions
Symbol Min Typ Max
Linear Gain
Gps — 19 —
Drain Efficiency
ƒ1 = 1805 MHz, POUT = 50 W avg
hD
—
38
—
Adjacent Channel Power Ratio
ACPR
—
–32
—
Linear Gain
Gps — 19 —
Drain Efficiency
ƒ2 = 2170 MHz, POUT = 50 W avg
hD
—
36
—
Adjacent Channel Power Ratio
ACPR
—
–28
—
Unit
dB
%
dBc
dB
%
dBc
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Advance Specification
1 of 4
Rev. 01, 2015-07-27
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet GTVA221701FA.PDF ] | |
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