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Número de pieza | PESD12VV1BL | |
Descripción | Very low capacitance bidirectional ESD protection diode | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
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Very low capacitance bidirectional ESD protection diode
Rev. 2 — 18 March 2013
Product data sheet
1. Product profile
1.1 General description
Very low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode
designed to protect one signal line from the damage caused by ESD and other transients.
The device is housed in a leadless ultra small DFN1006-2 (SOD882) Surface-Mounted
Device (SMD) plastic package.
1.2 Features and benefits
Bidirectional ESD protection of one line ESD protection up to 30 kV
Low diode capacitance Cd = 17 pF
IEC 61000-4-2; level 4 (ESD)
Rated peak pulse power: PPPM = 290 W IEC 61000-4-5 (surge); IPPM = 7.8 A
Ultra low leakage current IRM < 1 nA AEC-Q101 qualified
1.3 Applications
Computers and peripherals
Audio and video equipment
Cellular handsets and accessories
Portable electronics
Communication systems
1.4 Quick reference data
Table 1. Quick reference data
Tamb = 25 C unless otherwise specified.
Symbol Parameter
Conditions
VRWM
reverse standoff voltage
Cd diode capacitance
f = 1 MHz; VR = 0 V
Min Typ Max Unit
- - 12 V
- 17 25 pF
2. Pinning information
Table 2.
Pin
1
2
Pinning
Description
cathode
cathode
Simplified outline
12
Transparent
top view
Graphic symbol
12
sym045
1 page NXP Semiconductors
PESD12VV1BL
Very low capacitance bidirectional ESD protection diode
ESD TESTER
Rd
Cs
IEC 61000-4-2 network
Cs = 150 pF; Rd = 330 Ω
450 Ω
RG 223/U
50 Ω coax
DUT
(DEVICE
UNDER
TEST)
10x
ATTENUATOR
4 GHz DIGITAL
OSCILLOSCOPE
50 Ω
vertical scale = 2 kV/div
horizontal scale = 10 ns/div
vertical scale = 20 V/div
horizontal scale = 50 ns/div
GND
GND
unclamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network)
GND
vertical scale = 2 kV/div
horizontal scale = 10 ns/div
clamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network)
GND
vertical scale = 20 V/div
horizontal scale = 50 ns/div
unclamped -8 kV ESD pulse waveform
(IEC 61000-4-2 network)
Fig 6. ESD clamping test setup and waveforms
clamped -8 kV ESD pulse waveform
(IEC 61000-4-2 network)
aaa-002726
PESD12VV1BL
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 18 March 2013
© NXP B.V. 2013. All rights reserved.
5 of 12
5 Page NXP Semiconductors
PESD12VV1BL
Very low capacitance bidirectional ESD protection diode
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
PESD12VV1BL
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 18 March 2013
© NXP B.V. 2013. All rights reserved.
11 of 12
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PESD12VV1BL | Very low capacitance bidirectional ESD protection diode | NXP Semiconductors |
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