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Número de pieza | UF730-E | |
Descripción | N-CHANNEL POWER MOSFET | |
Fabricantes | Unisonic Technologies | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de UF730-E (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! UNISONIC TECHNOLOGIES CO., LTD
UF730-E
5.5 Amps, 400 Volts
N-CHANNEL POWER MOSFET
DESCRIPTION
The N-Channel enhancement mode silicon gate power
MOSFET is designed for high voltage, high speed power
switching applications such as switching regulators, switching
converters, solenoid, motor drivers, relay drivers.
FEATURES
* RDS(ON)=0.85Ω@ VGS=10V, ID=3.0A
* Avalanche Energy Specified
* Rugged - SOA is Power Dissipation Limited
* Fast Switching Capability
* Linear Transfer Characteristics
* High Input Impedance
SYMBOL
1
Power MOSFET
TO-220
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UF730L-TA3-T
UF730G-TA3-T
Package
TO-220
Pin Assignment
123
GDS
Packing
Tube
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd.
1 of 6
QW-R502-A06.B
1 page UF730-E
TYPICAL CHARACTERISTICS
Power MOSFET
Output Characteristics
10
VGS=10
Pulse Duration=80μs
8
V GS=6.0V
Duty Cycle = 0.5% Max
6 VGS=5.5V
4
VGS=5.0V
2
VGS=4.5V
0 VGS=4.0V
0 40 80 120 160 200
Drain to Source Voltage, VDS (V)
Sturation Characteristics
10 Pulse Duration=80μs VGS=10V
Duty Cycle = 0.5% Max
8
VGS=6.0V
6
VGS=5.5V
4
VGS=5.0V
2 VGS=4.5V
VGS=4.0V
0
0 40 80 120 160 200
Drain to Source Voltage, VDS (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 6
QW-R502-A06.B
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet UF730-E.PDF ] |
Número de pieza | Descripción | Fabricantes |
UF730-E | N-CHANNEL POWER MOSFET | Unisonic Technologies |
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