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PDF F5N50 Data sheet ( Hoja de datos )
| Número de pieza | F5N50 | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | Unisonic Technologies | |
| Logotipo |  |
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UNISONIC TECHNOLOGIES CO., LTD
F5N50
5A, 500V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC F5N50 is an N-channel power MOSFET adopting
UTC’s advanced technology to provide customers with DMOS,
planar stripe technology. This technology is designed to meet the
requirements of the minimum on-state resistance and perfect
switching performance. It also can withstand high energy pulse in
the avalanche and communication mode.
The UTC F5N50 can be used in applications, such as active
power factor correction, high efficiency switched mode power
supplies, electronic lamp ballasts based on half bridge topology.
FEATURES
* RDS(ON) < 1.6Ω @ VGS=10V, ID=2.5A
* 100% avalanche tested
* High switching speed
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
F5N50L-TF3-T
F5N50G-TF3-T
F5N50L-TN3-R
F5N50G-TN3-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220F
TO-252
Pin Assignment
123
GDS
GDS
Packing
Tube
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-A90.B
1 page  
F5N50
TEST CIRCUITS AND WAVEFORMS(Cont.)
RG
VGS
DUT
ISD
+
VDS
L
-
Driver
Same Type
as DUT
Power MOSFET
VDD
dv/dt controlled by RG
ISD controlled by pulse period
Peak Diode Recovery dv/dt Test Circuit & Waveforms
VGS
(Driver)
D=
Gate
Gate
Pulse
Pulse
Width
Period
10V
ISD
(DUT)
VDS
(DUT)
IFM, Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 6
QW-R502-A90.B
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet F5N50.PDF ] | |
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