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PDF 13N50K Data sheet ( Hoja de datos )

Número de pieza 13N50K
Descripción N-CHANNEL POWER MOSFET
Fabricantes Unisonic Technologies 
Logotipo Unisonic Technologies Logotipo



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No Preview Available ! 13N50K Hoja de datos, Descripción, Manual

UNISONIC TECHNOLOGIES CO., LTD
13N50K
Preliminary
13A, 500V N-CHANNEL
POWER MOSFET
Power MOSFET
DESCRIPTION
The UTC 13N50K is an N-Channel enhancement mode power
MOSFET. The device adopts planar stripe and uses DMOS
technology to minimize and provide lower on-state resistance and
faster switching speed. It can also withstand high energy pulse
under the avalanche and commutation mode conditions.
The UTC 13N50K is ideally suitable for high efficiency switch
mode power supply, power factor correction, electronic lamp ballast
based on half bridge topology.
FEATURES
* RDS(ON) <0.48@VGS = 10V
* Ultra low gate charge (typical 39nC )
* Low reverse transfer Capacitance ( CRSS = typical 20pF )
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness
SYMBOL
1
TO-220F2
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
13N50KL-TF2-T
13N50KG-TF2-T
Package
TO-220F2
Pin Assignment
123
GDS
Packing
Tube
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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13N50K pdf
13N50K
Preliminary
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
-
+
VDS
-
L
Power MOSFET
RG
VGS
Same Type
as D.U.T.
Driver
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
VDD
VGS
(Driver)
ISD
(D.U.T.)
VDS
(D.U.T.)
Peak Diode Recovery dv/dt Test Circuit
P.W.
Period
P. W.
D= Period
VGS= 10V
IFM, Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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