|
|
PDF K4A60DB Data sheet ( Hoja de datos )
| Número de pieza | K4A60DB | |
| Descripción | TK4A60DB | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de K4A60DB (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
TK4A60DB
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK4A60DB
Switching Regulator Applications
• Low drain-source ON-resistance: RDS (ON) = 1.6Ω(typ.)
• High forward transfer admittance: |Yfs| = 2.2 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 600V)
• Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)
Ф3.2 ± 0.2 10 ± 0.3
A
Unit: mm
2.7 ± 0.2
1.14 ± 0.15
Absolute Maximum Ratings (Ta = 25°C)
0.69 ± 0.15
Ф0.2 M A
Characteristics
Drain-source voltage
Gate-source voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
600
±30
3.7
14.8
35
173
3.7
3.5
150
−55 to 150
Unit
V
V
A
W
mJ
A
mJ
°C
°C
2.54 2.54
123
1: Gate
2: Drain
3: Source
JEDEC
⎯
JEITA
SC-67
TOSHIBA
2-10U1B
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Symbol
Rth (ch-c)
Rth (ch-a)
Max
3.57
62.5
Unit
°C/W
°C/W
Note 1: Ensure that the channel temperature does not exceed 150℃.
Note 2: VDD = 90 V, Tch = 25°C(initial), L = 22 mH, RG = 25 Ω, IAR = 3.7 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1
2
3
1 2009-06-05
1 page  
TK4A60DB
rth – tw
10
1 Duty=0.5
0.2
0.1
0.1 0.05
0.02
0.01
0.01
0.001
0.00001
0.0001
SINGLE PULSE
0.001
0.01
Pulse width tw (s)
PDM
t
T
Duty = t/T
Rth (ch-c) = 3.57 °C/W
0.1 1 10
SAFE OPERATING AREA
100
ID max (pulse) *
10
ID max (continuous)
1
100 μs *
1 ms *
0.1
0.01
※ Single pulse Tc=25℃
Curves must be derated
linearly with increase in
temperature.
0.001
0.1 1
10
100
Drain-source voltage VDS (V)
1000
EAS – Tch
200
160
120
80
40
0
25 50 75 100 125 150
Channel temperature (initial) Tch (°C)
15 V
−15 V
Test circuit
RG = 25 Ω
VDD = 90 V, L = 22 mH
BVDSS
IAR
VDD
VDS
Wave form
ΕAS
=
1
2
⋅L
⋅I2
⋅
⎜⎜⎝⎛
BVDSS
BVDSS − VDD
⎟⎟⎠⎞
5 2009-06-05
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet K4A60DB.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| K4A60DA | 600V, 3.5A, N-Channel MOSFET, TK4A60DA |  Toshiba |
| K4A60DB | TK4A60DB | Toshiba Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |