PDF PESD9V0V4UK Data sheet ( Hoja de datos )

Número de pieza	PESD9V0V4UK
Descripción	Very low capacitance unidirectional quadruple ESD protection diode arrays
Fabricantes	NXP Semiconductors
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No Preview Available ! PESD3V3V4UK; PESD5V0V4UK; PESD9V0V4UK Very low capacitance unidirectional quadruple ESD protection diode arrays Rev. 1 — 25 August 2010 Product data sheet 1. Product profile 1.1 General description Very low capacitance unidirectional quadruple ElectroStatic Discharge (ESD) protection diode arrays in a leadless ultra small SOT891 Surface-Mounted Device (SMD) plastic package designed to protect up to four unidirectional signal lines from the damage caused by ESD and other transients. 1.2 Features and benefits ESD protection of up to four lines Very low diode capacitance Max. peak pulse power: PPP = 28 W Low clamping voltage: VCL = 9.5 V AEC-Q101 qualified Very low leakage current: IRM = 0.1 μA ESD protection up to 15 kV IEC 61000-4-2; level 4 (ESD) IEC 61000-4-5 (surge); IPP = 2.7 A 1.3 Applications Computers and peripherals Audio and video equipment Cellular handsets and accessories Communication systems Portable electronics Subscriber Identity Module (SIM) card protection 1.4 Quick reference data Table 1. Quick reference data Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Per diode VRWM reverse standoff voltage PESD3V3V4UK PESD5V0V4UK PESD9V0V4UK Min Typ Max Unit - - 3.3 V - - 5.0 V - - 9.0 V 1 page NXP Semiconductors PESDxV4UK series Very low capacitance unidirectional quadruple ESD protection arrays 6. Characteristics Table 8. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Per diode VRWM reverse standoff voltage PESD3V3V4UK PESD5V0V4UK PESD9V0V4UK IRM reverse leakage current PESD3V3V4UK VRWM = 3.3 V PESD5V0V4UK VRWM = 5.0 V PESD9V0V4UK VRWM = 9.0 V VBR breakdown voltage IR = 1 mA PESD3V3V4UK PESD5V0V4UK PESD9V0V4UK Cd diode capacitance PESD3V3V4UK f = 1 MHz; VR = 0 V PESD5V0V4UK PESD9V0V4UK VCL clamping voltage PESD3V3V4UK IPP = 2.6 A PESD5V0V4UK IPP = 2.4 A PESD9V0V4UK IPP = 1.5 A rdif differential resistance IR = 5 mA PESD3V3V4UK PESD5V0V4UK PESD9V0V4UK Min Typ Max Unit - - 3.3 V - - 5.0 V - - 9.0 V - 0.13 1 μA - 0.05 0.3 μA - 0.003 0.1 μA 5.3 5.6 6.47 6.8 11.4 12 5.9 V 7.14 V 12.7 V - - - [1][2] - - - - - - 13 17 12.5 15 6.5 10 pF pF pF - 9.5 V - 10 V - 19 V 5 16 2.5 8 10 30 Ω Ω Ω [1] Non-repetitive current pulse 8/20 μs exponential decay waveform according to IEC 61000-4-5. [2] Measured from pin 1, 3, 4 or 6 to pin 2. PESDXV4UK_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 25 August 2010 © NXP B.V. 2010. All rights reserved. 5 of 15 5 Page NXP Semiconductors 11. Soldering PESDxV4UK series Very low capacitance unidirectional quadruple ESD protection arrays 1.05 1.4 0.7 0.5 0.6 (6×) (6×) solder resist solder land plus solder paste occupied area Dimensions in mm 0.15 (6×) 0.25 (6×) 0.35 Reflow soldering is the only recommended soldering method. Fig 12. Reflow soldering footprint SOT891 sot891_fr PESDXV4UK_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 25 August 2010 © NXP B.V. 2010. All rights reserved. 11 of 15 11 Page

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