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PDF PESD3V3V4UG Data sheet ( Hoja de datos )

Número de pieza PESD3V3V4UG
Descripción Very low capacitance unidirectional quadruple ESD protection diode arrays
Fabricantes NXP Semiconductors 
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PESDxV4UF; PESDxV4UG;
PESDxV4UW
Very low capacitance unidirectional quadruple ESD
protection diode arrays
Rev. 03 — 28 January 2008
Product data sheet
1. Product profile
1.1 General description
Very low capacitance unidirectional quadruple ElectroStatic Discharge (ESD) protection
diode arrays in small Surface-Mounted Device (SMD) plastic packages designed to
protect up to four signal lines from the damage caused by ESD and other transients.
Table 1. Product overview
Type number
Package
NXP
PESD3V3V4UF
SOT886
PESD5V0V4UF
SOT886
PESD3V3V4UG
SOT353
PESD5V0V4UG
SOT353
PESD3V3V4UW
SOT665
PESD5V0V4UW
SOT665
JEITA
-
-
SC-88A
SC-88A
-
-
JEDEC
MO-252
MO-252
-
-
-
-
Package configuration
leadless ultra small
leadless ultra small
very small
very small
ultra small and flat lead
ultra small and flat lead
1.2 Features
I ESD protection of up to four lines
I Very low diode capacitance
I Max. peak pulse power: PPP = 16 W
I Low clamping voltage: VCL = 11 V
I Ultra low leakage current: IRM = 25 nA
I ESD protection up to 12 kV
I IEC 61000-4-2; level 4 (ESD)
I IEC 61000-4-5 (surge); IPP = 1.5 A
1.3 Applications
I Computers and peripherals
I Audio and video equipment
I Cellular handsets and accessories
I Communication systems
I Portable electronics
I Subscriber Identity Module (SIM) card
protection

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PESD3V3V4UG pdf
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PESDxV4UF/G/W
Very low capacitance quadruple ESD protection diode arrays
6. Characteristics
Table 9. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Per diode
VRWM
reverse standoff voltage
PESD3V3V4UF
PESD3V3V4UG
PESD3V3V4UW
PESD5V0V4UF
PESD5V0V4UG
PESD5V0V4UW
IRM reverse leakage current
PESD3V3V4UF
PESD3V3V4UG
PESD3V3V4UW
VRWM = 3.3 V
PESD5V0V4UF
PESD5V0V4UG
PESD5V0V4UW
VRWM = 5.0 V
VBR breakdown voltage
PESD3V3V4UF
PESD3V3V4UG
PESD3V3V4UW
IR = 1 mA
PESD5V0V4UF
PESD5V0V4UG
PESD5V0V4UW
Cd diode capacitance
PESD3V3V4UF
PESD3V3V4UG
PESD3V3V4UW
f = 1 MHz
VR = 0 V
PESD3V3V4UF
PESD3V3V4UG
PESD3V3V4UW
VR = 3.3 V
PESD5V0V4UF
PESD5V0V4UG
PESD5V0V4UW
VR = 0 V
PESD5V0V4UF
PESD5V0V4UG
PESD5V0V4UW
VR = 5 V
Min Typ Max Unit
- - 3.3 V
- - 5.0 V
- 40 300 nA
- 3 25 nA
5.3 5.6 5.9 V
6.4 6.8 7.2 V
- 15 18 pF
- 9 12 pF
- 12 15 pF
- 6 9 pF
PESDXV4UF_G_W_3
Product data sheet
Rev. 03 — 28 January 2008
© NXP B.V. 2008. All rights reserved.
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PESD3V3V4UG arduino
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PESDxV4UF/G/W
Very low capacitance quadruple ESD protection diode arrays
9. Packing information
Table 10. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number Package Description
PESD3V3V4UF SOT886
PESD5V0V4UF SOT886
PESD3V3V4UG SOT353
PESD5V0V4UG SOT353
PESD3V3V4UW SOT665
PESD5V0V4UW SOT665
4 mm pitch, 8 mm tape and reel; T1
4 mm pitch, 8 mm tape and reel; T4
4 mm pitch, 8 mm tape and reel; T1
4 mm pitch, 8 mm tape and reel; T4
4 mm pitch, 8 mm tape and reel; T1
4 mm pitch, 8 mm tape and reel; T2
4 mm pitch, 8 mm tape and reel; T1
4 mm pitch, 8 mm tape and reel; T2
2 mm pitch, 8 mm tape and reel
4 mm pitch, 8 mm tape and reel
2 mm pitch, 8 mm tape and reel
4 mm pitch, 8 mm tape and reel
Packing quantity
3000 4000 5000
[2] - - -115
[3] - - -132
[2] - - -115
[3] - - -132
[2] -115 -
-
[4] -125 -
-
[2] -115 -
-
[4] -125 -
-
---
- -115 -
---
- -115 -
8 000
-
-
-
-
-
-
-
-
-315
-
-315
-
10 000
-
-
-
-
-135
-165
-135
-165
-
-
-
-
[1] For further information and the availability of packing methods, see Section 13.
[2] T1: normal taping
[3] T4: 90° rotated reverse taping
[4] T2: reverse taping
10. Soldering
1.250
0.675
0.370
(6×)
0.500
0.270
(6×)
0.325
(6×)
1.700
0.500
0.425
(6×)
solder lands
solder paste
occupied area
Dimensions in mm
sot886_fr
Reflow soldering is the only recommended soldering method.
Fig 13. Reflow soldering footprint PESDxV4UF (SOT886)
PESDXV4UF_G_W_3
Product data sheet
Rev. 03 — 28 January 2008
© NXP B.V. 2008. All rights reserved.
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