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PDF PESD5V0S5UD Data sheet ( Hoja de datos )

Número de pieza PESD5V0S5UD
Descripción Fivefold ESD protection diode arrays
Fabricantes NXP Semiconductors 
Logotipo NXP Semiconductors Logotipo



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PESDxS5UD series
Fivefold ESD protection diode arrays
Rev. 02 — 7 December 2006
Product data sheet
1. Product profile
1.1 General description
Fivefold ElectroStatic Discharge (ESD) protection diode arrays in a SOT457 (SC-74) small
Surface-Mounted Device (SMD) plastic package designed to protect up to five signal lines
from the damage caused by ESD and other transients.
1.2 Features
I ESD protection of up to five lines
I Max. peak pulse power: PPP = 200 W
I Ultra low leakage current: IRM = 50 pA
I Low clamping voltage: VCL = 12 V at
IPP = 20 A
I ESD protection up to 30 kV
I IEC 61000-4-2; level 4 (ESD)
I IEC 61000-4-5 (surge); IPP up to 20 A
1.3 Applications
I Computers and peripherals
I Audio and video equipment
I Cellular handsets and accessories
I Communication systems
I Portable electronics
I Subscriber Identity Module (SIM) card
protection
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Per diode
VRWM
reverse standoff voltage
PESD3V3S5UD
PESD5V0S5UD
PESD12VS5UD
PESD15VS5UD
PESD24VS5UD
Conditions
Min Typ Max Unit
- - 3.3 V
- - 5V
- - 12 V
- - 15 V
- - 24 V

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PESD5V0S5UD pdf
NXP Semiconductors
PESDxS5UD series
Fivefold ESD protection diode arrays
Table 8. Characteristics …continued
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
Cd diode capacitance
f = 1 MHz; VR = 0 V
PESD3V3S5UD
- 215 300 pF
PESD5V0S5UD
- 165 220 pF
PESD12VS5UD
- 73 100 pF
PESD15VS5UD
- 60 90 pF
PESD24VS5UD
- 45 70 pF
VCL clamping voltage
PESD3V3S5UD
IPP = 1 A
IPP = 20 A
PESD5V0S5UD
IPP = 1 A
IPP = 20 A
PESD12VS5UD
IPP = 1 A
IPP = 10 A
PESD15VS5UD
IPP = 1 A
IPP = 6 A
PESD24VS5UD
IPP = 1 A
IPP = 4 A
rdif differential resistance IR = 5 mA
[1][2]
- - 8V
- - 12 V
- - 8V
- - 13 V
- - 17 V
- - 24 V
- - 22 V
- - 33 V
- - 33 V
- - 52 V
- - 25
[1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.
[2] Measured from pin 1, 3, 4, 5 or 6 to 2.
104
PPP
(W)
103
102
10
006aaa698
1.2
PPP
PPP(25°C)
0.8
0.4
001aaa633
1
1 10 102 103 104
tp (µs)
Tamb = 25 °C
Fig 3. Peak pulse power as a function of exponential
pulse duration; typical values
0
0 50 100 150 200
Tj (°C)
Fig 4. Relative variation of peak pulse power as a
function of junction temperature; typical values
PESDXS5UD_SER_2
Product data sheet
Rev. 02 — 7 December 2006
© NXP B.V. 2006. All rights reserved.
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PESD5V0S5UD arduino
NXP Semiconductors
PESDxS5UD series
Fivefold ESD protection diode arrays
11. Revision history
Table 10. Revision history
Document ID
Release date Data sheet status
Change notice Supersedes
PESDXS5UD_SER_2
Modifications:
20061207
Product data sheet
-
PESDXS5UD_SER_1
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Table 2 “Pinning”: symbol drawing amended
Table 5 “Limiting values”: amended
Table 6 “ESD maximum ratings”: amended
Table 7 “ESD standards compliance”: amended
Table 8 “Characteristics”: VBR minimum and maximum values for PESD15VS5UD adapted
Figure 7: figure notes adapted
Section 10 “Soldering”: added
PESDXS5UD_SER_1 20060404
Product data sheet
-
-
PESDXS5UD_SER_2
Product data sheet
Rev. 02 — 7 December 2006
© NXP B.V. 2006. All rights reserved.
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