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PDF PESD3V3L4UF Data sheet ( Hoja de datos )

Número de pieza PESD3V3L4UF
Descripción Low capacitance unidirectional quadruple ESD protection diode arrays
Fabricantes NXP Semiconductors 
Logotipo NXP Semiconductors Logotipo



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PESDxL4UF; PESDxL4UG;
PESDxL4UW
Low capacitance unidirectional quadruple ESD protection
diode arrays
Rev. 04 — 28 February 2008
Product data sheet
1. Product profile
1.1 General description
Low capacitance unidirectional quadruple ElectroStatic Discharge (ESD) protection diode
arrays in small Surface-Mounted Device (SMD) plastic packages designed to protect up to
four signal lines from the damage caused by ESD and other transients.
Table 1. Product overview
Type number
Package
NXP
PESD3V3L4UF
SOT886
PESD5V0L4UF
SOT886
PESD3V3L4UG
SOT353
PESD5V0L4UG
SOT353
PESD3V3L4UW
SOT665
PESD5V0L4UW
SOT665
JEITA
-
-
SC-88A
SC-88A
-
-
JEDEC
MO-252
MO-252
-
-
-
-
Package configuration
leadless ultra small
leadless ultra small
very small
very small
ultra small and flat lead
ultra small and flat lead
1.2 Features
I ESD protection of up to four lines
I Low diode capacitance
I Max. peak pulse power: PPP = 30 W
I Low clamping voltage: VCL = 12 V
I Ultra low leakage current: IRM = 5 nA
I ESD protection up to 20 kV
I IEC 61000-4-2; level 4 (ESD)
I IEC 61000-4-5 (surge); IPP = 2.5 A
1.3 Applications
I Computers and peripherals
I Audio and video equipment
I Cellular handsets and accessories
I Communication systems
I Portable electronics
I Subscriber Identity Module (SIM) card
protection

1 page




PESD3V3L4UF pdf
NXP Semiconductors
PESDxL4UF/G/W
Low capacitance unidirectional quadruple ESD protection diode arrays
120
IPP
(%)
80
40
100 % IPP; 8 µs
001aaa630
et
50 % IPP; 20 µs
0
0 10 20 30 40
t (µs)
Fig 1. 8/20 µs pulse waveform according to
IEC 61000-4-5
IPP
100 %
90 %
001aaa631
10 %
tr = 0.7 ns to 1 ns
30 ns
60 ns
Fig 2. ESD pulse waveform according to
IEC 61000-4-2
t
6. Characteristics
Table 9. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Per diode
VRWM
reverse standoff voltage
PESD3V3L4UF
PESD3V3L4UG
PESD3V3L4UW
PESD5V0L4UF
PESD5V0L4UG
PESD5V0L4UW
IRM reverse leakage current
PESD3V3L4UF
PESD3V3L4UG
VRWM = 3.3 V
PESD3V3L4UW
PESD5V0L4UF
PESD5V0L4UG
PESD5V0L4UW
VRWM = 5.0 V
VBR breakdown voltage
PESD3V3L4UF
PESD3V3L4UG
PESD3V3L4UW
IR = 1 mA
PESD5V0L4UF
PESD5V0L4UG
PESD5V0L4UW
Min Typ Max Unit
- - 3.3 V
- - 5.0 V
- 75 300 nA
- 5 25 nA
5.32 5.6 5.88 V
6.46 6.8 7.14 V
PESDXL4UF_G_W_4
Product data sheet
Rev. 04 — 28 February 2008
© NXP B.V. 2008. All rights reserved.
5 of 17

5 Page





PESD3V3L4UF arduino
NXP Semiconductors
PESDxL4UF/G/W
Low capacitance unidirectional quadruple ESD protection diode arrays
8. Package outline
1.05
0.95
0.6
0.5
1.5
1.4
0.5
3
2
1
4
5
6
0.40
0.32
Dimensions in mm
0.35
0.27
0.25
0.17
0.50
max
0.04
max
04-07-22
2.2 1.1
1.8 0.8
5 4 0.45
0.15
2.2 1.35
2.0 1.15
12
0.65
1.3
Dimensions in mm
3
0.3
0.2
0.25
0.10
04-11-16
Fig 10. Package outline PESDxL4UF (SOT886)
Fig 11. Package outline PESDxL4UG (SOT353/SC-88A)
1.7 1.3
1.5 1.1
1.7
1.5
5
0.6
0.5
4
0.3
0.1
12
0.5
1
Dimensions in mm
Fig 12. Package outline PESDxL4UW (SOT665)
3
0.27
0.17
0.18
0.08
04-11-08
PESDXL4UF_G_W_4
Product data sheet
Rev. 04 — 28 February 2008
© NXP B.V. 2008. All rights reserved.
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