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PDF PESD3V3S4UF Data sheet ( Hoja de datos )

Número de pieza PESD3V3S4UF
Descripción Unidirectional quadruple ESD protection diode arrays
Fabricantes NXP Semiconductors 
Logotipo NXP Semiconductors Logotipo



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No Preview Available ! PESD3V3S4UF Hoja de datos, Descripción, Manual

PESD3V3S4UF; PESD5V0S4UF
Unidirectional quadruple ESD protection diode arrays
Rev. 01 — 17 January 2008
Product data sheet
1. Product profile
1.1 General description
Unidirectional quadruple ElectroStatic Discharge (ESD) protection diode arrays in a small
SOT886 Surface-Mounted Device (SMD) plastic package designed to protect up to four
signal lines from the damage caused by ESD and other transients.
1.2 Features
I ESD protection of up to four lines
I Max. peak pulse power: PPP = 110 W
I Low clamping voltage: VCL = 11 V
I Ultra low leakage current: IRM = 4 nA
I ESD protection up to 30 kV
I IEC 61000-4-2; level 4 (ESD)
I IEC 61000-4-5 (surge); IPP = 10 A
I AEC-Q101 qualified
1.3 Applications
I Computers and peripherals
I Audio and video equipment
I Cellular handsets and accessories
I Communication systems
I Portable electronics
1.4 Quick reference data
Table 1. Quick reference data
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Per diode
VRWM
reverse standoff voltage
PESD3V3S4UF
PESD5V0S4UF
Cd diode capacitance
PESD3V3S4UF
f = 1 MHz; VR = 0 V
PESD5V0S4UF
Min Typ Max Unit
- - 3.3 V
- - 5.0 V
- 110 300 pF
- 85 220 pF

1 page




PESD3V3S4UF pdf
NXP Semiconductors
PESD3V3S4UF; PESD5V0S4UF
Unidirectional quadruple ESD protection diode arrays
104
PPP
(W)
103
102
10
006aab146
1.2
PPP
PPP(25°C)
0.8
0.4
001aaa633
1
1 10 102 103 104
tp (µs)
Tamb = 25 °C
Fig 3. Peak pulse power as a function of exponential
pulse duration; typical values
0
0 50 100 150 200
Tj (°C)
Fig 4. Relative variation of peak pulse power as a
function of junction temperature; typical values
120
Cd
(pF)
80
40
006aab147
(1)
(2)
10
IR
IR(25°C)
1
006aab148
0
02468
VR (V)
f = 1 MHz; Tamb = 25 °C
(1) PESD3V3S4UF
(2) PESD5V0S4UF
Fig 5. Diode capacitance as a function of reverse
voltage; typical values
101
75
25
25
75 125 175
Tj (°C)
Fig 6. Relative variation of reverse current as a
function of junction temperature; typical values
PESD3V3S4UF_PESD5V0S4UF_1
Product data sheet
Rev. 01 — 17 January 2008
© NXP B.V. 2008. All rights reserved.
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PESD3V3S4UF arduino
NXP Semiconductors
PESD3V3S4UF; PESD5V0S4UF
Unidirectional quadruple ESD protection diode arrays
11. Revision history
Table 10. Revision history
Document ID
Release date
PESD3V3S4UF_PESD5V0S4UF_1 20080117
Data sheet status
Product data sheet
Change notice
-
Supersedes
-
PESD3V3S4UF_PESD5V0S4UF_1
Product data sheet
Rev. 01 — 17 January 2008
© NXP B.V. 2008. All rights reserved.
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