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PDF KM616FR1000 Data sheet ( Hoja de datos )

Número de pieza KM616FR1000
Descripción 64K x 16-bit Super Low Power and Low Voltage Full CMOS Static RAM
Fabricantes Samsung 
Logotipo Samsung Logotipo



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No Preview Available ! KM616FR1000 Hoja de datos, Descripción, Manual

KM616FV1000, KM616FS1000, KM616FR1000 Family CMOS SRAM
Document Title
64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Revision History
Revision No. History
0.0 Initial draft
0.1 Revise
- Erase 100ns part from KM616FS1000 Family
- Add 150ns part on KM616FS1000 Family
- Add 32-sTSOP1 new package
- Add high power version
ISB1=5.0µA(Max)
- Change VDR(Min) 1.0 to 1.5V
1.0 Finalize
- Concept change high power version to low low power version
ISB1=5.0µA(Max)
- Change super low power version with special handling
ISB1=1.0µA(Max)
- Reduce Icc & Icc1
Read : 15mA to 10mA
Write : 25mA to 20mA
2.0 Revise
- Change datasheet format
- Erase reverse type package
Draft Date
March 15, 1996
June 3, 1996
Remark
Advance
Preliminary
December 1, 1996 Final
February 26, 1998 Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1 Revision 2.0
February 1998

1 page




KM616FR1000 pdf
KM616FV1000, KM616FS1000, KM616FR1000 Family CMOS SRAM
AC OPERATING CONDITIONS
TEST CONDITIONS (Test Load and Test Input/Output Reference)
Input pulse level : 0.4 to 2.2V for Vcc=3.3V, 3.0V, 2.5V
0.4 to 1.8V for Vcc=2.0V
Input rising and falling time : 5ns
Input and output reference voltage : 1.5V for Vcc=3.3V, 3.0V
1.1V for Vcc=2.5V
0.9V for Vcc=2.0V
Output load (See right) :CL=100pF+1TTL
CL=30pF+1TTL
VTM3)
R12)
CL1)
R22)
1. Including scope and jig capacitance
2. R1=3070, R2=3150
3. VTM =2.8V for VCC=3.0/3.3V
=2.3V for VCC=2.5V
=1.8V for VCC=2.0V
AC CHARACTERISTICS (Commercial product :TA=0 to 70°C, Industrial product : TA=-40 to 85°C
KM616FV1000 Family : Vcc=3.0~3.6V, KM616FS1000 Family : Vcc=2.3~3.3V,
KM616FR1000 Family : Vcc=1.8~2.7V)
Parameter List
Read cycle time
Address access time
Chip select to output
Output enable to valid output
UB, LB Access Time
Read
Chip select to low-Z output
Output enable to low-Z output
Chip disable to high-Z output
Output disable to high-Z output
Output hold from address change
Write cycle time
Chip select to end of write
Address set-up time
Address valid to end of write
Write pulse width
Write UB, LB Valid to End of Write
Write recovery time
Write to output high-Z
Data to write time overlap
Data hold from write time
End write to output low-Z
Speed Bins
Symbol
70ns
85ns
120ns
150ns
300ns Units
Min Max Min Max Min Max Min Max Min Max
tRC
70 - 85 - 120 - 150 - 300 -
ns
tAA - 70 - 85 - 120 - 150 - 300 ns
tCO - 70 - 85 - 120 - 150 - 300 ns
tOE - 35 - 45 - 60 - 75 - 150 ns
tBA - 35 - 45 - 60 - 75 - 150 ns
tLZ
10 - 10 - 20 - 20 - 50 -
ns
tOLZ, tBLZ 5 - 5 - 20 - 20 - 30 - ns
tHZ 0 25 0 25 0 35 0 40 0 60 ns
tOHZ, tBHZ 0 25 0 25 0 35 0 40 0 60 ns
tOH
10 - 15 - 15 - 15 - 30 -
ns
tWC
70 - 85 - 120 - 150 - 300 -
ns
tCW
65 - 70 - 100 - 120 - 300 -
ns
tAS 0 - 0 - 0 - 0 - 0 - ns
tAW
65 - 70 - 100 - 120 - 300 -
ns
tWP
55 - 60 - 80 - 100 - 200 -
ns
tBW
65 - 70 - 100 - 120 - 300 -
ns
tWR 0 - 0 - 0 - 0 - 0 - ns
tWHZ
0 25 0 25 0 35 0 40 0 60 ns
tDW
30 - 35 - 50 - 60 - 120 -
ns
tDH 0 - 0 - 0 - 0 - 0 - ns
tOW 5 - 5 - 5 - 5 - 20 - ns
DATA RETENTION CHARACTERISTICS
Item
Symbol
Test Condition
Vcc for data retention
VDR CSVcc-0.2V
Data retention current
IDR Vcc=3.0V
Data retention set-up time
Recovery time
tSDR
tRDR
See data retention waveform
1. Super low power product=1µA with special handling.
Min Typ Max Unit
1.5 - 3.6 V
-
-
5.01)
µA
0-
tRC -
- ns
-
5 Revision 2.0
February 1998

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