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PDF IRF7488 Data sheet ( Hoja de datos )

Número de pieza IRF7488
Descripción Power MOSFET ( Transistor )
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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No Preview Available ! IRF7488 Hoja de datos, Descripción, Manual

PD - 94507
IRF7488
Applications
l High frequency DC-DC converters
HEXFET® Power MOSFET
VDSS
80V
RDS(on) max
29mW@VGS=10V
Qg
38nC
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
S
S
S
l Fully Characterized Avalanche Voltage G
and Current
18
27
36
45
Top View
AA
D
D
D
D
SO-8
Absolute Maximum Ratings
Symbol
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
TJ
TSTG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Symbol
RθJL
RθJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient „
Notes  through „ are on page 9
www.irf.com
Max.
80
± 20
6.3
5.0
50
2.5
1.6
20
-55 to + 150
300 (1.6mm from case )
Units
V
A
W
mW/°C
°C
Typ.
–––
–––
Max.
20
50
Units
°C/W
1
9/23/02

1 page




IRF7488 pdf
IRF7488
7
6
5
4
3
2
1
0
25
50 75 100 125
TC , Case Temperature (°C)
150
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
100
D = 0.50
10 0.20
0.10
0.05
0.02
1 0.01
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
0.1 SINGLE PULSE
( THERMAL RESPONSE )
0.01
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
1
10
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
100
5

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