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Número de pieza | IPT012N08N5 | |
Descripción | MOSFET ( Transistor ) | |
Fabricantes | Infineon | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IPT012N08N5 (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
No Preview Available ! MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOSTM
OptiMOSTM5Power-Transistor,80V
IPT012N08N5
DataSheet
Rev.2.1
Final
PowerManagement&Multimarket
1 page OptiMOSTM5Power-Transistor,80V
IPT012N08N5
4Electricalcharacteristics
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance1)
Transconductance
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
RG
gfs
Table5Dynamiccharacteristics1)
Parameter
Symbol
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Ciss
Coss
Crss
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Min.
80
2.2
-
-
-
-
-
-
120
Values
Typ. Max.
--
3.0 3.8
0.1 1
10 100
10 100
1.0 1.2
1.3 1.7
1.6 2.4
250 -
Unit Note/TestCondition
V VGS=0V,ID=1mA
V VDS=VGS,ID=280µA
µA
VDS=80V,VGS=0V,Tj=25°C
VDS=80V,VGS=0V,Tj=125°C
nA VGS=20V,VDS=0V
mΩ
VGS=10V,ID=150A
VGS=6V,ID=75A
Ω-
S |VDS|>2|ID|RDS(on)max,ID=100A
Min.
-
-
-
-
-
-
-
Values
Unit
Typ. Max.
13000 17000 pF
2000 2600 pF
86 150 pF
35 -
ns
31 -
ns
82 -
ns
30 -
ns
Note/TestCondition
VGS=0V,VDS=40V,f=1MHz
VGS=0V,VDS=40V,f=1MHz
VGS=0V,VDS=40V,f=1MHz
VDD=40V,VGS=10V,ID=100A,
RG,ext=1.8Ω
VDD=40V,VGS=10V,ID=100A,
RG,ext=1.8Ω
VDD=40V,VGS=10V,ID=100A,
RG,ext=1.8Ω
VDD=40V,VGS=10V,ID=100A,
RG,ext=1.8Ω
1) Defined by design. Not subject to production test.
Final Data Sheet
5
Rev.2.1,2015-02-23
5 Page 6PackageOutlines
OptiMOSTM5Power-Transistor,80V
IPT012N08N5
1) partially covered with Mold Flash
MILLIMETERS
DIM
MIN MAX
A 2.20 2.40
b 0.70 0.90
b1 9.70 9.90
b2 0.42 0.50
c 0.40 0.60
D
10.28
10.58
D2 3.30
E 9.70 10.10
E1 7.50
E4 8.50
E5 9.46
e 1.20 (BSC)
H
11.48
11.88
H1 6.55 6.75
H2 7.15
H3 3.59
H4 3.26
N8
K1 4.18
L 1.60 2.10
L1 0.70
L2 0.60
L4 1.00 1.30
Figure1OutlinePG-HSOF-8-1
Final Data Sheet
INCHES
MIN MAX
0.087
0.094
0.028
0.035
0.382
0.390
0.017
0.020
0.016
0.024
0.405
0.416
0.130
0.382
0.398
0.295
0.335
0.372
0.047 (BSC)
0.452
0.468
0.258
0.266
0.281
0.141
0.128
8
0.165
0.063
0.083
0.028
0.024
0.039
0.051
11
DOCUMENT NO.
Z8B00169619
SCALE 0
2
02
4mm
EUROPEAN PROJECTION
ISSUE DATE
20-02-2014
REVISION
02
Rev.2.1,2015-02-23
11 Page |
Páginas | Total 12 Páginas | |
PDF Descargar | [ Datasheet IPT012N08N5.PDF ] |
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IPT012N08N5 | MOSFET ( Transistor ) | Infineon |
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