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PDF IKZ75N65EL5 Data sheet ( Hoja de datos )
| Número de pieza | IKZ75N65EL5 | |
| Descripción | IGBT | |
| Fabricantes | Infineon | |
| Logotipo |  |
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IGBT
LowVCE(sat)IGBTinTRENCHSTOPTM5technologycopackedwithRAPID1
fastandsoftantiparalleldiode
IKZ75N65EL5
650VDuoPackIGBTanddiode
LowVCE(sat)seriesfifthgeneration
Datasheet
IndustrialPowerControl
1 page  
IKZ75N65EL5
LowVCE(sat)seriesfifthgeneration
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES
Collector-emitter saturation voltage VCEsat
Diode forward voltage
VF
Gate-emitter threshold voltage
VGE(th)
Zero gate voltage collector current ICES
Gate-emitter leakage current
Transconductance
IGES
gfs
VGE=0V,IC=0.20mA
VGE=15.0V,IC=75.0A
Tvj=25°C
Tvj=100°C
Tvj=150°C
VGE=0V,IF=75.0A
Tvj=25°C
Tvj=100°C
Tvj=150°C
IC=1.00mA,VCE=VGE
VCE=650V,VGE=0V
Tvj=25°C
Tvj=150°C
Tvj=175°C
VCE=0V,VGE=20V
VCE=20V,IC=75.0A
min.
Value
typ.
max. Unit
650 -
-V
-
-
1.10 1.35
1.11 -
V
- 1.12 -
-
-
1.40 1.70
1.42 -
V
- 1.40 -
4.2 5.0 5.8 V
-
-
- 40.0
1000.0 -
µA
5000.0 -
- - 100 nA
- 155.0 - S
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
DynamicCharacteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance1)
measured 5mm (0.197 in.) from
case
Symbol Conditions
Cies
Coes VCE=25V,VGE=0V,f=1MHz
Cres
QG
VCC=520V,IC=75.0A,
VGE=15V
LE
Value
Unit
min. typ. max.
- 12100 -
- 150 -
- 42 -
- 436.0 -
pF
nC
- 13.0 - nH
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
IGBTCharacteristic,atTvj=25°C
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tvj=25°C,
VCC=400V,IC=75.0A,
VGE=0.0/15.0V,
RG(on)=23.0Ω,RG(off)=4.0Ω,
Lσ=30nH,Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
min.
Value
typ.
max. Unit
- 120 - ns
- 23 - ns
- 275 - ns
- 50 - ns
- 1.57 - mJ
- 3.20 - mJ
- 4.77 - mJ
1) The internal emitter inductance does not affect the gate control circuitry if bypassed by using the Kelvin emitter pin.
5
Rev.2.1,2014-12-10
5 Page 
IKZ75N65EL5
LowVCE(sat)seriesfifthgeneration
1E+5
1E+4
Cies
Coes
Cres
1000
100
0.1 D = 0.5
0.2
0.1
0.05
0.02
0.01
single pulse
0.01
10
0 5 10 15 20 25 30
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 17. Typicalcapacitanceasafunctionof
collector-emittervoltage
(VGE=0V,f=1MHz)
i: 1 2 3 4 5 6
ri[K/W]: 4.7E-3 0.0564027 0.0496416 0.1540335 0.0124251 1.7E-3
τi[s]: 2.7E-5 2.5E-4
2.2E-3
0.0141795 0.1200871 1.91251
0.001
1E-6
1E-5 1E-4 0.001 0.01
tp,PULSEWIDTH[s]
0.1
Figure 18. IGBTtransientthermalimpedance
(D=tp/T)
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
single pulse
100
Tvj=25°C,IF=75A
Tvj=150°C,IF=75A
90
80
70
60
50
40
i: 1 2 3 4 5 6 7
ri[K/W]: 3.1E-4 0.01435 0.09435 0.09881 0.22828 0.01967 2.0E-3
τi[s]: 1.0E-5 3.0E-5 2.2E-4 2.2E-3 0.01247 0.10291 1.85641
0.001
1E-6
1E-5
1E-4
0.001
0.01
tp,PULSEWIDTH[s]
0.1
Figure 19. Diodetransientthermalimpedanceasa
functionofpulsewidth
(D=tp/T)
30
20
1500
2500
3500
4500
5500
6500
dIF/dt,DIODECURRENTSLOPE[A/µs]
Figure 20. Typicalreverserecoverytimeasafunction
ofdiodecurrentslope
(VR=400V)
11 Rev.2.1,2014-12-10
11 Page | ||
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