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PDF IGP40N65H5 Data sheet ( Hoja de datos )

Número de pieza IGP40N65H5
Descripción IGBT
Fabricantes Infineon 
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No Preview Available ! IGP40N65H5 Hoja de datos, Descripción, Manual

IGBT
Highspeed5IGBTinTRENCHSTOPTM5technology
IGP40N65H5,IGW40N65H5
650VIGBThighspeedswitchingseriesfifthgeneration
Datasheet
IndustrialPowerControl

1 page




IGP40N65H5 pdf
IGP40N65H5,IGW40N65H5
Highspeedswitchingseriesfifthgeneration
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
DynamicCharacteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from
case
Symbol Conditions
Cies
Coes VCE=25V,VGE=0V,f=1MHz
Cres
QG
VCC=520V,IC=40.0A,
VGE=15V
LE
PG-TO220-3
PG-TO247-3
min.
Value
typ.
max. Unit
- 2500 -
- 40 - pF
-9-
- 95.0 - nC
-
7.0
13.0
-
nH
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
IGBTCharacteristic,atTvj=25°C
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tvj=25°C,
VCC=400V,IC=20.0A,
VGE=0.0/15.0V,
RG(on)=15.0,RG(off)=15.0,
Lσ=30nH,Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
Tvj=25°C,
VCC=400V,IC=5.0A,
VGE=0.0/15.0V,
RG(on)=15.0,RG(off)=15.0,
Lσ=30nH,Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
min.
Value
typ.
max. Unit
- 22 - ns
- 12 - ns
- 165 - ns
- 13 - ns
- 0.39 - mJ
- 0.12 - mJ
- 0.51 - mJ
- 19 - ns
- 4 - ns
- 190 - ns
- 24 - ns
- 0.09 - mJ
- 0.05 - mJ
- 0.14 - mJ
5 Rev.2.1,2015-04-30

5 Page





IGP40N65H5 arduino
IGP40N65H5,IGW40N65H5
Highspeedswitchingseriesfifthgeneration
1E+4
1000
Cies
Coes
Cres
100
10
1
D=0.5
0.2
0.1 0.1
0.05
0.02
0.01
single pulse
0.01
1
0 5 10 15 20 25 30
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 17. Typicalcapacitanceasafunctionof
collector-emittervoltage
(VGE=0V,f=1MHz)
0.001
1E-6
i: 1
23
4
ri[K/W]: 0.08245484 0.144197 0.2151774 0.1581708
τi[s]: 7.3E-5
7.0E-4 0.01235548 0.08020881
1E-5 1E-4 0.001 0.01
tp,PULSEWIDTH[s]
0.1
1
Figure 18. IGBTtransientthermalresistance
(D=tp/T)
11 Rev.2.1,2015-04-30

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