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PDF IDW30C65D2 Data sheet ( Hoja de datos )

Número de pieza IDW30C65D2
Descripción Diode ( Rectifier )
Fabricantes Infineon 
Logotipo Infineon Logotipo



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No Preview Available ! IDW30C65D2 Hoja de datos, Descripción, Manual

Diode
RapidSwitchingEmitterControlledDiode
IDW30C65D2
EmitterControlledDiodeRapid2CommonCathodeSeries
Datasheet
IndustrialPowerControl

1 page




IDW30C65D2 pdf
IDW30C65D2
EmitterControlledDiodeRapid2CommonCathodeSeries
Switching Characteristics (per leg), Inductive Load
Parameter
Symbol Conditions
Diode Characteristic, at Tvj = 25°C
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Tvj=25°C,
VR=400V,
IF=15.0A,
diF/dt=1000A/µs,
Lσ=35nH,
Cσ=32pF,
switch IPW60R045CP.
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Tvj=25°C,
VR=400V,
IF=15.0A,
diF/dt=200A/µs,
Lσ=35nH,
Cσ=32pF,
switch IPW60R045CP.
Value
Unit
min. typ. max.
- 32 - ns
- 0.20 - µC
- 12.8 - A
- -6300 - A/µs
- 51 - ns
- 0.12 - µC
- 3.3 - A
- -1500 - A/µs
Switching Characteristics (per leg), Inductive Load
Parameter
Symbol Conditions
Diode Characteristic, at Tvj = 175°C/125°C
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Tvj=175°C,
VR=400V,
IF=15.0A,
diF/dt=1000A/µs,
Lσ=35nH,
Cσ=32pF,
switch IPW60R045CP.
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Tvj=125°C,
VR=400V,
IF=15.0A,
diF/dt=200A/µs,
Lσ=35nH,
Cσ=32pF,
switch IPW60R045CP.
Value
Unit
min. typ. max.
- 32 - ns
- 0.37 - µC
- 16.9 - A
- -6400 - A/µs
- 51 - ns
- 0.21 - µC
- 5.0 - A
- -1900 - A/µs
5 Rev.2.1,2014-12-09

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