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PDF 7N10 Datasheet ( Hoja de datos )

Número de pieza 7N10
Descripción N-CHANNEL POWER MOSFET
Fabricantes Unisonic Technologies 
Logotipo Unisonic Technologies Logotipo



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7N10 Hoja de datos, Descripción, Manual
UNISONIC TECHNOLOGIES CO., LTD
7N10
7A, 100V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 7N10 is an N-Channel enhancement mode power
MOSFET, providing customers with excellent switching performance
and minimum on-state resistance. The UTC 7N10 uses planar stripe
and DMOS technology to provide perfect quality. This device can
also withstand high energy pulse in the avalanche and the
commutation mode.
The UTC 7N10 is generally applied in low voltage applications,
such as DC motor controls, audio amplifiers and high efficiency
switching DC/DC converters.
1
1
Power MOSFET
1 SOT-223
TO-252
TO-252D
FEATURES
* RDS(ON) < 0.35@ VGS =10V, ID =3.5A
* Fast Switching
* Improved dv/dt Capability
SYMBOL
1
TO-251
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
- 7N10G-AA3-R
7N10L-TM3-T
7N10G-TM3-T
7N10L-TN3-R
7N10G-TN3-R
7N10L-TND-R
7N10G-TND-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
SOT-223
TO-251
TO-252
TO-252D
Pin Assignment
123
GDS
GDS
GDS
GDS
Packing
Tape Reel
Tube
Tape Reel
Tape Reel
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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QW-R502-394.J

1 page

7N10 pdf
7N10
TEST CIRCUITS AND WAVEFORMS
Peak Diode Recovery dv/dt Test Circuit & Waveforms
Power MOSFET
RG
VGS
DUT
ISD
+
VDS
L
-
Driver
Same Type
as DUT
VDD
dv/dt controlled by RG
ISD controlled by pulse period
VGS
(Driver)
ISD
(DUT)
VDS
(DUT)
D=
Gate
Gate
Pulse
Pulse
Width
Period
10V
IFM, Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-394.J

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