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PDF 5052H Data sheet ( Hoja de datos )

Número de pieza 5052H
Descripción Crystal Oscillator Module ICs
Fabricantes NPC 
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5052H series
Crystal Oscillator Module ICs
OVERVIEW
The 5052H series are miniature crystal oscillator module ICs supported 20MHz to 80 MHz fundamental oscillation mode and 125°C
operation. The Oscillator circuit stage has voltage regulator drive, significantly reducing current consumption and crystal drive current,
compared with existing devices, and significantly reducing the oscillator characteristics supply voltage dependency. There are 3 pad layout
package options available for optimized mounting, making these devices ideal for miniature crystal oscillators.
FEATURES
Wide range of operating supply voltage: 1.60 to 3.63V
Regulated voltage drive oscillator circuit for reduced
Multi-stage frequency divider for low-frequency
output support: 1.25MHz (Hx1~Hx5 ver.)
power consumption and crystal drive current
2.5MHz (HxP~HxT ver.)
Optimized low crystal drive current oscillation for
Frequency divider built-in
miniature crystal units
3 pad layout options for mounting
Selectable by version: fOSC,fOSC/2,fOSC/4,fOSC/8,fOSC/16
Output drive capability: ±4mA
5052HAx: for Flip Chip Bonding
-40 to 125°C operating temperature range
5052HBx: for Wire Bonding (Type I)
Standby function
5052HCx: for Wire Bonding (Type II)
High impedance in standby mode, oscillator stops
Recommended oscillation frequency range
(fundamental oscillator) :20 to 60MHz (Hx1~Hx5 ver.)
CMOS output duty level (1/2VDD)
50±5% output duty
40 to 80MHz (HxP~HxT ver.)
15pF output drive capability
Wafer form (WF5052Hxx), Chip form (CF5052Hxx)
APPLICATIONS
3.2 x 2.5 , 2.5 x 2.0 , 2.0 x 1.6 size miniature crystal oscillator modules
SERIES CONFIGURATION
Operating supply
voltage range[V]
PAD layout
Oscillation frequency
range*1[MHz]
fOSC
Output frequency and version name*2
fOSC/2
fOSC/4
fOSC/8
fOSC/16
Flip Chip Bonding
20 to 60
40 to 80
5052HA1
5052HAP
5052HA2
5052HAQ
5052HA3
5052HAR
5052HA4
5052HAS
5052HA5
5052HAT
1.60 to 3.63
Wire Bonding
Type I
20 to 60
40 to 80
5052HB1
5052HBP
5052HB2
-
5052HB3
-
5052HB4
-
5052HB5
-
Wire Bonding
20 to 60
5052HC1
5052HC2
5052HC3
5052HC4
5052HC5
Type II
40 to 80
5052HCP
-
-
-
-
*1. The oscillation frequency is a yardstick value derived from the crystal used for NPC characteristics authentication. However, the oscillation frequency
range is not guaranteed. Specifically, the characteristics can vary greatly due to crystal characteristics and mounting conditions, so the oscillation
characteristics of components must be carefully evaluated.
*2. It becomes WF5052Hxx in case of the wafer form and CF5052Hxx in case of the chip form.
ORDERING INFORMATION
Device
Package
WF5052Hxx-5
Wafer form
CF5052Hxx-5
Chip form
Version name
WF5052H□□-5
FormWF : Wafer form
CF : Chip(Die) form
Frequency divider function/Oscillation frequency range
PAD layout A: for Flip Chip Bonding
B: for Wire Bonding (Type I)
C: for Wire Bonding (Type II)
SEIKO NPC CORPORATION - 1

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5052H pdf
5052H series
DC Characteristics (HxP~HxT version)
VDD=1.60 to 3.63V, VSS=0V, Ta= -40 to +125°C unless otherwise noted.
Parameter
Symbol
Condition
MIN TYP MAX Unit
Q pin
HIGH-level output voltage
Q pin
LOW-level output voltage
INHN pin
HIGH-level input voltage
INHN pin
LOW-level input voltage
Q pin
Output leakage current
VOH measurement circuit 3, IOH=-4mA
VOL measurement circuit 3, IOL=4mA
VIH measurement circuit 4
VIL measurement circuit 4
IZ
measurement circuit 5,
INHN=“Low”
VDD-0.4
0
0.7VDD
Q=VDD
Q=VSS
-10
VDD
0.4
0.3VDD
10
V
V
V
V
A
5052HxP(fOSC), measurement circuit 1,
no load, INHN=“OPEN”,
fOSC=80MHz, fOUT=80MHz
VDD=3.3V
VDD=2.5V
VDD=1.8V
2.4 4.8
1.7 3.4 mA
1.3 2.6
5052HxQ(fOSC/2), measurement circuit 1,
no load, INHN=”OPEN”,
fOSC=80MHz, fOUT=40MHz
VDD=3.3V
VDD=2.5V
VDD=1.8V
2.0 4.0
1.3 2.6 mA
0.9 1.8
Current consumption*1
5052HxR(fOSC/4), measurement circuit 1, VDD=3.3V
IDD no load, INHN=“OPEN”,
VDD=2.5V
fOSC=80MHz, fOUT=20MHz
VDD=1.8V
1.7 3.4
1.1 2.2 mA
0.8 1.6
5052HxS(fOSC/8), measurement circuit 1,
no load, INHN=“OPEN”,
fOSC=80MHz, fOUT=10MHz
VDD=3.3V
VDD=2.5V
VDD=1.8V
1.5 3.0
0.9 1.8 mA
0.7 1.4
5052HxT(fOSC/16),measurement circuit 1,
no load, INHN=“OPEN”,
fOSC=80MHz, fOUT=5MHz
VDD=3.3V
VDD=2.5V
VDD=1.8V
1.4 2.8
0.9 1.8 mA
0.7 1.4
Standby current
IST
Measurement circuit 1
INHN=“Low”
Ta=-40 to +85°C
Ta=-40 to +125°C
10
A
20
INHN pin
pull-up resistance
RPU1 Measurement circuit 6
RPU2 Measurement circuit 6
Oscillator feedback resistance Rf
0.8 3 24 M
30 70 150 k
50 100 200 k
Oscillator capacitance
CG Design value (a monitor pattern on a wafer is tested),
CD Excluding parasitic capacitance.
1.6 2.0 2.4
pF
2.4 3.0 3.6
*1. The consumption current IDD(CLOUT) with a load capacitance(CLOUT) connected to the Q pin is given by the following equation, where IDD is the no-load
consumption current and fOUT is the output frequency.
IDD(CLOUT)[mA] = IDD[mA]+CLOUT[pF]×VDD[V]×fOUT[MHz]·10-3
SEIKO NPC CORPORATION - 5

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5052H arduino
5052H series
REFERENCE DATA
The following characteristics are measured using the crystal below. Note that the characteristics will vary with the crystal used.
Crystal used for measurement
Parameter
40MHz
C0(pF)
R1()
1.4
8
48MHz
1.8
7
80MHz
3.2
13
Crystal parameters
L1 C1 R1
C0
Current Consumption
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.5 2.0 2.5 3.0 3.5
VDD [V]
5052Hx1, fOSC=48MHz, Ta=25C, no load
4.0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.5 2.0 2.5 3.0 3.5
VDD [V]
5052HxP, fOSC=80MHz, Ta=25C, no load
4.0
Negative Resistance
00
-500 -500
-1000
-1500
-2000
10
C0: 2pF
C0: 1pF
C0: none
20 30 40
Frequency [MHz]
50
60
5052Hx1, VDD=3.3V, Ta=25C
Measurement equipment:Agilent Impedance analyzer 4396B
-1000
-1500
-2000
20
C0: 2pF
C0: 1pF
C0: none
30 40 50 60 70 80
Frequency [MHz]
5052HxP, VDD=3.3V, Ta=25C
The figures show the measurement result of the crystal equivalent circuit C0 capacitance, connected between the XT and XTN pins.
They were performed withAgilent 4396B using the NPC test jig.
They may vary in a measurement jig, and measurement environment.
SEIKO NPC CORPORATION - 11

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