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PDF MGA-665P8 Data sheet ( Hoja de datos )

Número de pieza MGA-665P8
Descripción Low Noise Amplifier
Fabricantes AVAGO 
Logotipo AVAGO Logotipo



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MGA-665P8
GaAs Enhancement-Mode PHEMT
0.5 – 6 GHz Low Noise Amplifier
Data Sheet
Description
Avago’s MGA-665P8 is an economical, easy-to-use
GaAs MMIC Low Noise Amplifier (LNA) with a unique
active-low power-down function. The LNA has low
noise figure and high gain achieved through the use of
Avago Technologies’ proprietary GaAs Enhancement-
mode PHEMT process. It is housed in a miniature 2.0 x
2.0 x 0.75 mm 8-pin Leadless-Plastic-Chip-Carrier (LPCC)
package. The compact footprint and low profile coupled
with low noise, high gain and high linearity makes the
MGA-665P8 an ideal choice as an LNA for broadband
general-purpose applications. Its excellent broadband
isolation also makes it a good buffer amplifier.
The output of the MGA-665P8 provides a very good
broadband match to 50 Ω. Its input requires a simple
external LC network to provide a low noise figure and
good input return loss. Power supply voltage is applied
to both the output terminal and a separate VD terminal.
A simple external bias insertion circuit consisting of a
shunt inductor and a series dc block capacitor is suf-
ficient to apply power supply voltage to the output of
the MGA-665P8. The MGA-665P8 provides typical device
performance of 1.45 dB noise figure, 16 dB gain and an
OIP3 of +18.1 dBm at 5.25 GHz, at a bias point of 3 V and
20.5 mA.
Features
Surface Mount, 2.0 x 2.0 x 0.75 mm 8-lead LPCC
Active-low power-down function
Single +3 V supply operation
Low noise and high gain MMIC
Output 50 Ω match
Excellent isolation
Minimal match and external biasing components
Housed in miniature 2 x 2 x 0.75 mm LPCC package
Pb-free & MSL-1 package
Specifications
0.5 to 6 GHz operation
At 3 V, 20.5 mA, 2.4 GHz:
NF = 1.2 dB
Gain = 18.4 dB
OIP3 = 19 dBm
At 3 V, 20.5 mA, 5.25 GHz:
NF = 1.45 dB
Gain = 16 dB
OIP3 = 18.1 dBm
Pin Configuration, Top View
1: GND
2: RFIN
3: GND
4: UNUSED
GND PADDLE
8: UNUSED
POWER DOWN FUNCITON:
LOGIC LOW (0-1 V): POWER ON
LOGIC HIGH (2-3 V): POWER OFF
7: RFOUT & VD
6: VD
5: POWERDOWN
NOTES:
1. PINS 1, 3, AND PADDLE NEED TO BE
PROPERLY GROUNDED TO OBTAIN
SPECIFIED PERFORMANCE.
2. SUPPLY VOLTAGE, VD, NEEDS TO BE
APPLIED AT PINS 6 & 7. SUPPLY AT
PIN 7 TO BE APPLIED USING A BIAS
TEE OR EQUIVALENT.
Attention: Observe precautions for handling electrostatic sensitive devices.
ESD Machine Model = 40 V
ESD Human Body Model = 150 V
Refer to Avago Application Note A004R: Electrostatic Discharge, Damage and Control.

1 page




MGA-665P8 pdf
MGA-665P8 Performance Curves Tuned For NFmin at VD = 3.0 V, VC = 0 V, ID = 20.5 mA[10]
(at 25°C unless specified otherwise)
1.8
1.6
1.4
1.2
1.0
0.8
-40°C
0.6 25°C
85°C
0.40.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
FREQUENCY (GHz)
Figure 8. Minimum noise figure vs. frequency and
temperature.
24
22
20
18
16
14
-40°C
12 25°C
85°C
10
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
FREQUENCY (GHz)
Figure 9. Associated gain measured at NFmin tuned
condition vs. frequency and temperature.
10
9
8
7
6
5
-40 C
4 25 C
85 C
3
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
FREQUENCY (GHz)
Figure 11. Output power for 1 dB gain compression
measured at NFmin tuned condition vs. frequency and
temperature.
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.40.5
2.7 V
3.0 V
3.3 V
1.5 2.5 3.5 4.5 5.5
FREQUENCY (GHz)
Figure 12. Minimum noise figure vs. frequency and
voltage.
22
20
18
16
14
-40°C
12 25°C
85°C
10
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
FREQUENCY (GHz)
Figure 10. Output third order intercept point mea-
sured at NFmin tuned condition vs. frequency and
temperature.
24
22
20
18
16
14
2.7 V
12 3.0 V
3.3 V
100.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
FREQUENCY (GHz)
Figure 13. Associated gain measured at NFmin tuned
condition vs. frequency and voltage.
22
20
18
16
14
2.7 V
12 3.0 V
3.3 V
10
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
FREQUENCY (GHz)
10
9
8
7
6
5
2.7 V
4 3.0 V
3.3 V
3
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
FREQUENCY (GHz)
Figure 14. Output third order intercept point
measured at NFmin tuned condition vs. fre-
quency and voltage.
Figure 15. Output power for 1 dB gain compres-
sion measured at NFmin tuned condition vs.
frequency and voltage.
Note:
10.  Measurements obtained using test fixture with input tuned for low noise figure with a double stub tuner. Gain, OIP3 and P1dB were mea-
sured at this tuned condition. Tuner and fixture losses have been de-embedded from actual measurements. The supply is connected to
ground via a bypass capacitor. The OIP3 is approximately 3dB lower without this bypass capacitor.


5 Page





MGA-665P8 arduino
Device Models
Refer to Avago’s Web Site www.Avago.com/view/rf
Part Number Ordering Information
Part Number
No. of Devices
MGA-665P8-TR1
3000
MGA-665P8-TR2
10000
MGA-665P8-BLK
100
Container
7” Reel
13” Reel
antistatic bag
2x2 LPCC (JEDEC DFP-N) Package Dimensions
D1
P PIN 1
R
E1
BOTTOM VIEW
L
e
b
A A1
SIDE VIEW
A2
SYMBOL
A
A1
A2
b
D
D1
E
E1
e
P
L
MIN.
0.70
0.00
0.225
1.9
0.65
1.9
1.45
0.2
0.35
DIMENSIONS
NOM.
0.75
0.02
0.203 REF
0.25
2.0
0.80
2.0
1.6
0.50 BSC.
0.25
0.4
MAX.
0.80
0.05
0.275
2.1
0.95
2.1
1.75
0.3
0.45
NOTE: MEASUREMENTS ARE IN MILLIMETERS.
11
PIN 1
1
2
3
4
D
1AX
TOP VIEW
END VIEW
8
7
E
6
5
A

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