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PDF IRL6297SDPBF Data sheet ( Hoja de datos )
| Número de pieza | IRL6297SDPBF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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IRL6297SDPbF
DirectFET® Dual N-Channel Power MOSFET
Applications
l Charge and Discharge Switch for Battery Application
l Isolation Switch for Input Power or Battery Application
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
20V max ±12V max 3.8mΩ@4.5V 5.4mΩ@2.5V
Features and Benefits
l Environmentaly Friendly Product
Qg tot
27nC
Qgd
9.5nC
Qgs2
1.4nC
Qrr
21nC
Qoss
15nC
Vgs(th)
0.80V
l RoHs Compliant, Halogen Free
l Dual Common-Drain N-Channel MOSFETs Provides
High Level of Integration and Very Low RDS(on)
GG
DD
SS
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SA
DirectFET® ISOMETRIC
SQ SX ST SA MQ MX MT MP MC
Description
The IRL6297SDPbF combines the latest HEXFET® N-Channel Power MOSFET Silicon technology with the advanced DirectFET®
packaging to achieve the lowest on-state resistance in a package that has the footprint smaller than an SO-8 and only 0.6 mm profile. The
DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,
infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and
processes. The DirectFET® package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best
thermal resistance by 80%.
Base Part Number
IRL6297SDPbF
Package Type
DirectFET Small Can
Standard Pack
Form
Quantity
Tape and Reel
4800
Orderable part number
IRL6297SDTRPbF
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
Gate-to-Source Voltage
eContinuous Drain Current, VGS @ 10V
eContinuous Drain Current, VGS @ 10V
fContinuous Drain Current, VGS @ 10V
gPulsed Drain Current
Max.
20
±12
15
12
58
140
Units
V
A
20
ID = 15A
15
10
5 TJ = 125°C
TJ = 25°C
0
0 1 2 3 4 5 6 7 8 9 10 11 12
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
14.0
12.0
10.0
8.0
ID= 12A
VDS= 16V
VDS= 10V
VDS= 4.0V
6.0
4.0
2.0
0.0
0
10 20 30 40 50 60 70
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
1 www.irf.com © 2013 International Rectifier
September 5, 2013
1 page  
IRL6297SDPbF
1000
100
TJ = 150°C
10
TJ = 25°C
TJ = -40°C
1
VGS = 0V
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD, Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
60
50
40
30
20
10
0
25 50 75 100 125 150
TC , Case Temperature (°C)
Fig 12. Maximum Drain Current vs. Case Temperature
300
250
200
1000
100
10
1
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
10msec
1msec
0.1 Tc = 25°C
Tj = 150°C
Single Pulse
0.01
0.01
0.1
DC
1
10 100
VDS, Drain-to-Source Voltage (V)
Fig 11. Maximum Safe Operating Area
1.6
1.4
1.2
1.0
0.8
ID = 35µA
0.6 ID = 250µA
ID = 1.0mA
0.4 ID = 1.0A
0.2
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 13. Typical Threshold Voltage vs. Junction
Temperature
ID
TOP 2.1A
3.0A
BOTTOM 12A
150
100
50
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
5 www.irf.com © 2013 International Rectifier
September 5, 2013
5 Page | ||
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| PDF Descargar | [ Datasheet IRL6297SDPBF.PDF ] | |
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