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PDF IRL6283MPBF Data sheet ( Hoja de datos )
| Número de pieza | IRL6283MPBF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
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StrongIRFET™
IRL6283MTRPbF
Applications
•ORing, eFuse, and high current
load switch
•Load switch for battery
application
•Inverter switches for DC motor
application
VDSS
VGS
20V max ±12V max
DirectFET® N-Channel Power MOSFET
Vgs(th)
0.8V
Typical values (unless otherwise specified)
RDS(on)
RDS(on)
RDS(on)
0.50mΩ@10V 0.65mΩ@4.5V 1.1mΩ@2.5V
SS
Features and Benefits
•Environmentally Friendly Product
•RoHs compliant containing no Lead, no Bromide
and no Halogen
•Very Low RDS(on)
D
G
S
S
D
MD DirectFET™ ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ SX ST
MQ MD MT MP MC
Description
The IRL6283MTRPbF combines the latest HEXFET® N-Channel Power MOSFET Silicon technology with the advanced DirectFET®
packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The Direct-
FET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,
infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and
processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best
thermal resistance by 80%.
Base part number
IRL6283MTRPbF
Package Type
DirectFET Medium Can
Standard Pack
Form
Quantity
Tape and Reel
4800
Orderable Part Number
IRL6283MTRPbF
Absolute Maximum Ratings
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
EAS
IAR
Parameter
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current
Single Pulse Avalanche Energy
Avalanche Current
Max.
±12
38
30
211
305
406
30
Units
V
A
mJ
A
2.0
1.8 ID = 38A
1.6
1.4
1.2
1.0
0.8
0.6
TJ = 25°C
TJ = 125°C
0.4
0 1 2 3 4 5 6 7 8 9 10 11 12
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
14.0
12.0
10.0
8.0
ID= 30A
VDS= 16V
VDS= 10V
VDS= 4.0V
6.0
4.0
2.0
0.0
0
50 100 150 200 250 300
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.88mH, RG = 50Ω, IAS = 30A.
1 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
September 24, 2014
1 page  
1000
100
TJ = 150°C
TJ = 25°C
TJ = -40°C
10
1
0.2
VGS = 0V
0.3 0.4 0.5 0.6 0.7 0.8 0.9
VSD, Source-to-Drain Voltage (V)
1.0
Fig 10. Typical Source-Drain Diode Forward Voltage
250
1000
100
IRL6283MTRPbF
OPERATION IN THIS AREA
LIMITED BY RDS(on)
1msec
100µsec
10 10msec
1
DC
0.1
0.01
Tc = 25°C
Tj = 150°C
Single Pulse
0.01
0.1
1
10
VDS, Drain-to-Source Voltage (V)
100
Fig 11. Maximum Safe Operating Area
1.2
200 1.0
150 0.8
ID = 100µA
100 0.6
50 0.4
0
25
50 75 100 125
TC , Case Temperature (°C)
150
Fig 12. Maximum Drain Current vs. Case Temperature
2000
1600
1200
0.2
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 13. Typical Threshold Voltage vs.
Junction Temperature
ID
TOP 1.8A
2.6A
BOTTOM 30A
800
400
5 www.irf.com
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
© 2014 International Rectifier
Submit Datasheet Feedback
September 24, 2014
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRL6283MPBF.PDF ] | |
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