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Número de pieza | IRGS30B60KPBF | |
Descripción | Insulated Gate Bipolar Transistor | |
Fabricantes | International Rectifier | |
Logotipo | ||
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INSULATED GATE BIPOLAR TRANSISTOR
IRGB30B60KPbF
IRGS30B60KPbF
IRGSL30B60KPbF
Features
• Low VCE (on) Non Punch Through IGBT Technology
• 10µs Short Circuit Capability
• Square RBSOA
• Positive VCE (on) Temperature Coefficient
• Maximum Junction Temperature rated at 175°C
• Lead-Free
C
G
E
n-channel
VCES = 600V
IC = 50A, TC=100°C
at TJ=175°C
tsc > 10µs, TJ=150°C
VCE(on) typ. = 1.95V
Benefits
• Benchmark Efficiency for Motor Control
• Rugged Transient Performance
• Low EMI
• Excellent Current Sharing in Parallel Operation
TO-220AB
D2Pak
TO-262
IRGB30B60KPbF IRGS30B60KPbF IRGSL30B60KPbF
Absolute Maximum Ratings
Parameter
VCES
Collector-to-Emitter Voltage
IC @ TC = 25°C Continuous Collector Current
IC @ TC = 100°C Continuous Collector Current
ICM Pulse Collector Current (Ref.Fig.C.T.5)
ILM Clamped Inductive Load current
VISOL
RMS Isolation Voltage, Terminal to Case, t=1 min.
VGE Gate-to-Emitter Voltage
PD @ TC = 25°C Maximum Power Dissipation
PD @ TC = 100°C Maximum Power Dissipation
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Max.
600
78g
50
120
120
2500
±20
370
180
-55 to +175
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Units
V
A
V
W
°C
Thermal / Mechanical Characteristics
Parameter
RθJC
RθCS
RθJA
RθJA
Wt
Junction-to-Case- IGBT
Case-to-Sink, flat, greased surface
dJunction-to-Ambient, typical socket mount
eÃÃJunction-to-Ambient (PCB Mount, Steady State)
Weight
Min.
–––
–––
–––
–––
–––
Typ.
–––
0.50
–––
–––
1.44
Max.
0.41*
–––
62
40
–––
Units
°C/W
g
* RθJC (end of life) = 0.65°C/W. This is the maximum measured value after 1000 temperature cycles from -55 to 150°C
and is accounted for by the physical wearout of the die attach medium.
www.irf.com
1
05/17/05
1 page IRGB/S/SL30B60KPbF
20
18
16
14
12
10
8
6
4
2
0
5
ICE = 15A
ICE = 30A
ICE = 60A
10 15
VGE (V)
20
Fig. 8 - Typical VCE vs. VGE
TJ = -40°C
20
18
16
14
12
10
8
6
4
2
0
5
ICE = 15A
ICE = 30A
ICE = 60A
10 15
VGE (V)
20
Fig. 9 - Typical VCE vs. VGE
TJ = 25°C
20
18
16
14
12
10
8
6
4
2
0
5
ICE = 15A
ICE = 30A
ICE = 60A
10 15
VGE (V)
20
Fig. 10 - Typical VCE vs. VGE
TJ = 150°C
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250
TJ = 25°C
200 TJ = 150°C
150
100
50 TJ = 150°C
0
05
TJ = 25°C
10
VGE (V)
15
20
Fig. 11 - Typ. Transfer Characteristics
VCE = 50V; tp = 10µs
5
5 Page D2Pak Package Outline
Dimensions are shown in millimeters (inches)
IRGB/S/SL30B60KPbF
D2Pak Part Marking Information
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11
11 Page |
Páginas | Total 14 Páginas | |
PDF Descargar | [ Datasheet IRGS30B60KPBF.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRGS30B60KPBF | Insulated Gate Bipolar Transistor | International Rectifier |
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