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PDF IRGR3B60KD2PBF Data sheet ( Hoja de datos )
| Número de pieza | IRGR3B60KD2PBF | |
| Descripción | Insulated Gate Bipolar Transistor | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 95036
IRGR3B60KD2PbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
• Lead-Free
Benefits
• Benchmark Efficiency for Motor Control.
C
G
E
n-channel
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
VCES = 600V
IC = 4.2A, TC=100°C
tsc > 10µs, TJ=150°C
VCE(on) typ. = 1.9V
Absolute Maximum Ratings
Parameter
VCES
Collector-to-Emitter Voltage
IC @ TC = 25°C Continuous Collector Current
IC @ TC = 100°C Continuous Collector Current
cICM Pulse Collector Current (Ref.Fig.C.T.5)
ILM Clamped Inductive Load current
IF @ Tc = 25°C Diode Continous Forward Current
IF @ Tc = 100°C Diode Continuous Forward Current
IFM Diode Maximum Forward Current
VGE Gate-to-Emitter Voltage
PD @ TC = 25°C Maximum Power Dissipation
PD @ TC = 100°C Maximum Power Dissipation
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature Range, for 10 sec.
Thermal / Mechanical Characteristics
Parameter
RθJC Junction-to-Case- IGBT
RθJC Junction-to-Case- Diode
dRθJA Junction-to-Ambient, (PCB Mount)
Wt Weight
www.irf.com
D-Pak
Max.
600
7.8
4.2
15.6
15.6
6.0
3.2
15.6
±20
52
21
-55 to +150
300 (0.063 in. (1.6mm) from case)
Units
V
A
V
W
°C
Min.
–––
–––
–––
–––
Typ.
–––
–––
–––
0.3
Max.
2.4
8.8
50
–––
Units
°C/W
g
1
2/23/04
1 page  
20
18
16
14
12
10
8
6
4
2
0
5
ICE = 1.5A
ICE = 3.0A
ICE = 6.0A
10 15
VGE (V)
20
Fig. 9 - Typical VCE vs. VGE
TJ = -40°C
IRGR3B60KD2PbF
20
18
16
14
12
10
8
6
4
2
0
5
ICE = 1.5A
ICE = 3.0A
ICE = 6.0A
10 15
VGE (V)
Fig. 10 - Typical VCE vs. VGE
TJ = 25°C
20
20
18
16
14
12
10
8
6
4
2
0
5
ICE = 1.5A
ICE = 3.0A
ICE = 6.0A
10 15
VGE (V)
20
Fig. 11 - Typical VCE vs. VGE
TJ = 150°C
www.irf.com
25
20 TJ = 25°C
15
TJ = 150°C
10
5
0
0
5 10 15 20
VGS, Gate-to-Source Voltage (V)
Fig. 12 - Typ. Transfer Characteristics
VCE = 50V; tp = 10µs
5
5 Page 
600 9
tf
500 Vce 7.5
400
90% Ice
6
300
5% Vce
4.5
5% Ice
200 3
Ice
100 1.5
00
Eof f Loss
-100
-1.5
0.3 0.5 0.7 0.9
Time (uS)
Fig. WF1- Typ. Turn-off Loss Waveform
@ TJ = 150°C using Fig. CT.4
100 15
0 12
-100
-200
-300
9
QR R
6
10% Peak
tR R IR R 3
-400
-500
Peak
IR R
0
-3
-600
-6
0.00 0.10 0.20 0.30 0.40 0.50
Time (uS)
Fig. WF3- Typ. Diode Recovery Waveform
@ TJ = 150°C using Fig. CT.4
www.irf.com
IRGR3B60KD2PbF
600
tr
12
11
500 Vce 10
Ice 9
400
90% Ice
8
7
300
10% Ice
6
5
200 4
3
100 2
5% Vce
1
0
-100
0.8
Eon
Loss
1
1.2
0
-1
-2
1.4
Time (uS)
Fig. WF2- Typ. Turn-on Loss Waveform
@ TJ = 150°C using Fig. CT.4
500 50
450 45
Vce
400 40
350 35
300 30
250 25
Ice
200 20
150 15
100 10
50 5
00
30 40 50 60 70
Time (uS)
Fig. WF4- Typ. S.C Waveform
@ TC = 150°C using Fig. CT.3
11
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet IRGR3B60KD2PBF.PDF ] | |
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