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PDF IRGP6650D-EPbF Data sheet ( Hoja de datos )

Número de pieza IRGP6650D-EPbF
Descripción Insulated Gate Bipolar Transistor
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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No Preview Available ! IRGP6650D-EPbF Hoja de datos, Descripción, Manual

 
VCES = 600V
IC = 50A, TC =100°C
IRGP6650DPbF
IRGP6650D-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
  C  C
C
tSC 5µs, TJ(max) = 175°C
VCE(ON) typ. = 1.65V @ IC = 35A
Applications
 Welding
 H Bridge Converters
G
E
n-channel
G
Gate
E
C
G
IRGP6650DPbF 
TO247AC 
C
Collector
GCE
IRGP6650DEPbF 
TO247AD 
E
Emitter
Features
Low VCE(ON) and Switching Losses
Optimized Diode for Full Bridge Hard Switch Converters
Square RBSOA and Maximum Temperature of 175°C
5µs Short Circuit
Positive VCE (ON) Temperature Co-efficient
Lead-free, RoHS compliant
Benefits
High Efficiency in a Wide Range of Applications
Optimized for Welding and H Bridge Converters
Improved Reliability due to Rugged Hard Switching
Performance and High Power Capability
Enables Short Circuit Protection Operation
Excellent Current Sharing in Parallel Operation
Environmentally friendly
Base part number
IRGP6650DPbF
IRGP6650D-EPbF
Package Type
TO-247AC
TO-247AD
Standard Pack
Form
Quantity
Tube
25
Tube
25
Orderable Part Number
IRGP6650DPbF
IRGP6650D-EPbF
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, VGE = 15V
Clamped Inductive Load Current, VGE = 20V
IFRM @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Diode Repetitive Peak Forward Current
Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Max.
600
80
50
105
140
25
140
±20
306
153
-40 to +175
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Units
V
A
V
W
°C  
 
Thermal Resistance
Parameter
RJC (IGBT)
RJC (Diode)
RCS
RJA
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
Max.
0.49
3.35
–––
40
Units
°C/W
1 www.irf.com © 2014 International Rectifier
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IRGP6650D-EPbF pdf
 
8
6 ICE = 18A
ICE = 35A
ICE = 70A
4
2
0
5
4000
10 15
VGE (V)
20
Fig. 12 - Typical VCE vs. VGE
TJ = 175°C
IRGP6650DPbF/IRGP6650D-EPbF
140
120 TJ = 25°C
TJ = 175°C
100
80
60
40
20
0
2 4 6 8 10 12 14 16
VGE (V)
Fig. 13 - Typ. Transfer Characteristics
VCE = 50V; tp = 20µs
1000
3000
2000
1000
EOFF
EON
0
0 10 20 30 40 50 60 70
IC (A)
Fig. 14 - Typ. Energy Loss vs. IC
TJ = 175°C; ; VCE = 400V, RG = 10; VGE = 15V
3000
tdOFF
100
tF
tdON
tR
10
1
0 10 20 30 40 50 60 70
IC (A)
Fig. 15 - Typ. Switching Time vs. IC
TJ = 175°C; VCE = 400V, RG = 10; VGE = 15V
1000
2500
2000
1500
1000
500
0
EOFF
EON
20 40 60 80 100
Rg ()
Fig. 16 - Typ. Energy Loss vs. RG
TJ = 175°C; VCE = 400V, ICE = 35A; VGE = 15V
5 www.irf.com © 2014 International Rectifier
100
tR
tdOFF
tF
tdON
10
0
20 40 60 80 100
RG ()
Fig. 17 - Typ. Switching Time vs. RG
TJ = 175°C; VCE = 400V, ICE = 35A; VGE = 15V
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November 14, 2014

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IRGP6650D-EPbF arduino
 
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
IRGP6650DPbF/IRGP6650D-EPbF
TO-247AC Part Marking Information
Notes: This part marking information applies to devices produced after 02/26/2001
EXAMPLE:
THIS IS AN IRFPE30
WITH ASSEMBLY
LOT CODE 5657
ASSEMBLED ON WW 35, 2001
IN THE ASSEMBLY LINE "H"
Note: "P" in assembly line position
indicates "Lead-Free"
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLY
LOT CODE
IRFPE30
135H
56 57
PART NUMBER
DATE CODE
YEAR 1 = 2001
WEEK 35
LINE H
TO-247AC package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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