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PDF IRGP4790PBF Data sheet ( Hoja de datos )

Número de pieza IRGP4790PBF
Descripción Insulated Gate Bipolar Transistor
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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No Preview Available ! IRGP4790PBF Hoja de datos, Descripción, Manual

 
VCES = 650V
IC = 90A, TC =100°C
tSC 5.5µs, TJ(max) = 175°C
VCE(ON) typ. = 1.7V @ IC = 75A
Applications
 Industrial Motor Drive
 UPS
 Solar Inverters
 Welding
Features
Low VCE(ON) and Switching Losses
5.5µs Short Circuit SOA
Square RBSOA
Maximum Junction Temperature 175°C
Positive VCE (ON) Temperature Coefficient
Lead-Free, RoHs compliant
IRGP4790PbF
IRGP4790-EPbF
Insulated Gate Bipolar Transistor
 
 
C 
G
E
n-channel
G
Gate
E
GC
IRGP4790PbF 
TO247AC 
C
Collector
E
GC
IRGP4790EPbF 
TO247AD 
E
Emitter
Benefits
High Efficiency in a Wide Range of Applications
Rugged Transient Performance
Increased Reliability
Excellent Current Sharing in Parallel Operation
Environmentally friendly
Base part number
IRGP4790PbF
IRGP4790-EPbF
Package Type
TO-247AC
TO-247AD
Standard Pack
Form
Quantity
Tube
25
Tube
25
Orderable Part Number
IRGP4790PbF
IRGP4790-EPbF
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, VGE=15V
Clamped Inductive Load Current, VGE=20V
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Max.
650
140
90
225
300
±20
455
230
-40 to +175
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Units
V
A 
V
W
C
Thermal Resistance
Parameter
RJC
RCS
RJA
Thermal Resistance Junction-to-Case
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Min.
–––
–––
–––
Typ.
–––
0.24
40
Max.
0.33
–––
–––
Units
°C/W
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August 22, 2014

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IRGP4790PBF pdf
 
225
180
135
90 TJ = 25°C
TJ = 175°C
45
0
2 4 6 8 10 12 14 16
VGE (V)
Fig. 12 - Typ. Transfer Characteristics
VCE = 50V; tp = 20µs
1000
tdOFF
100 tF
tdON
tR
10
0
50 100 150
IC (A)
Fig. 14 - Typ. Switching Time vs. IC
TJ = 175°C; L = 200µH; VCE = 400V, RG = 10; VGE = 15V
10000
1000
tdOFF
100 tR
tdON
tF
10
0
20 40 60 80 100 120
RG ()
Fig. 16 - Typ. Switching Time vs. RG
TJ = 175°C; L = 200µH; VCE = 400V, ICE = 75A; VGE = 15V
5 www.irf.com © 2014 International Rectifier
IRGP4790PbF/IRGP4790-EPbF
12
10
8
EON
6
4
EOFF
2
0
0 25 50 75 100 125 150
IC (A)
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 175°C; L = 200µH; VCE = 400V, RG = 10; VGE = 15V
11
10
9
8
7
6 EON
5
4 EOFF
3
2
0 25 50 75 100
Rg ()
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 200µH; VCE = 400V, ICE = 75A; VGE = 15V
24 400
20 Tsc
Isc 330
16 260
12 190
8 120
4 50
8 10 12 14 16 18
VGE (V)
Fig. 17 - VGE vs. Short Circuit Time
VCC = 400V; TC = 150°C
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August 22, 2014

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IRGP4790PBF arduino
  IRGP4790PbF/IRGP4790-EPbF
Qualification Information
Qualification Level
Moisture Sensitivity Level
RoHS Compliant
TO-247AC
TO-247AD
Industrial
(per JEDEC JESD47F)††
N/A
N/A
Yes
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
†† Applicable version of JEDEC standard at the time of product release.
Revision History
Date
8/22/2014
Comments
Updated Temperature Coeff. of Breakdown Voltage from “0.11V/C” to “0.65 V/C” on page 2 .
Updated IC vs. TC graph Fig.2 to match page1 spec data on page 3.
11 www.irf.com
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
© 2014 International Rectifier
Submit Datasheet Feedback
August 22, 2014

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