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PDF FDD9409_F085 Data sheet ( Hoja de datos )
| Número de pieza | FDD9409_F085 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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May 2014
FDD9409_F085
N-Channel PowerTrench® MOSFET
40 V, 90 A, 3.2 mΩ
D
Features
Typ RDS(on) = 2.3mΩ at VGS = 10V, ID = 80A
Typ Qg(tot) = 42nC at VGS = 10V, ID = 80A
UIS Capability
RoHS Compliant
Qualified to AEC Q101
Applications
Automotive Engine Control
Powertrain Management
Solenoid and Motor Drivers
Electronic Steering
Integrated Starter/Alternator
Distributed Power Architectures and VRM
Primary Switch for 12V Systems
D
G
G
S
DTO-P-2A5K2
(TO-252)
S
For current package drawing, please refer to the Fairchild
website at www.fairchildsemi.com/packaging
MOSFET Maximum Ratings TJ = 25°C unless otherwise noted.
Symbol
Parameter
VDSS
VGS
ID
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current - Continuous (VGS=10) (Note 1)
Pulsed Drain Current
EAS Single-Pulse Avalanche Energy
PD
Power Dissipation
Derate Above 25oC
TJ, TSTG
RθJC
RθJA
Operating and Storage Temperature
Thermal Resistance, Junction to Case
Maximum Thermal Resistance, Junction to Ambient
TC = 25°C
TC = 25°C
(Note 2)
(Note 3)
Ratings
40
±20
90
See Figure 4
101
150
1
-55 to + 175
1
52
Units
V
V
A
mJ
W
W/oC
oC
oC/W
oC/W
Package Marking and Ordering Information
Device Marking
Device
Package
FDD9409
FDD9409_F085 D-PAK(TO-252)
Reel Size
13”
Tape Width
12mm
Quantity
2500 units
Notes:
1: Current is limited by bondwire configuration.
2:
3:
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the solder
maximum
©2014 Fairchild Semiconductor Corporation
FDD9409_F085 Rev. C4
1
www.fairchildsemi.com
1 page  
Typical Characteristics
50
ID = 80A
40
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
30
TJ = 175oC
20
TJ = 25oC
10
0
2468
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 11. RDSON vs. Gate Voltage
10
1.8
PULSE DURATION = 80μs
1.6 DUTY CYCLE = 0.5% MAX
1.4
1.2
1.0
0.8
0.6
-80
ID = 80A
VGS = 10V
-40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE(oC)
Figure 12. Normalized RDSON vs. Junction
Temperature
1.2 1.10
VGS = VDS
ID = 250μA
ID = 1mA
1.0 1.05
0.8 1.00
0.6 0.95
0.4
-80
-40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE(oC)
Figure 13. Normalized Gate Threshold Voltage vs.
Temperature
0.90
-80
-40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)
Figure 14. Normalized Drain--Source Breakdown
Voltage vs. Junction Temperature
10000
1000
Ciss
Coss
100
f = 1MHz
Crss
VGS = 0V
10
0.1 1 10 100
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 15. Capacitance vs. Drain--Source Voltage
10
ID = 80A
8
6
4
VDD = 16V
VDD = 24V
VDD = 20V
2
0
0 10 20 30 40 50
Qg, GATE CHARGE(nC)
Figure 16. Gate Charge vs. Gate--Source Voltage
FDD9409_F085 Rev. C4
5
www.fairchildsemi.com
5 Page | ||
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