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PDF FDD9407_F085 Data sheet ( Hoja de datos )
| Número de pieza | FDD9407_F085 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Fairchild Semiconductor | |
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FDD9407_F085
N-Channel Power Trench® MOSFET
40V, 100A, 2.0mΩ
Features
Typ rDS(on) = 1.6mΩ at VGS = 10V, ID = 80A
Typ Qg(tot) = 86nC at VGS = 10V, ID = 80A
UIS Capability
RoHS Compliant
Qualified to AEC Q101
Applications
Automotive Engine Control
Powertrain Management
Solenoid and Motor Drivers
Electronic Steering
Integrated Starter/alternator
Distributed Power Architectures and VRM
Primary Switch for 12V Systems
G
S
August 2013
D
G
DTO-P-2A5K2
(TO-252)
D
S
MOSFET Maximum Ratings TJ = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGS
ID
Drain to Source Voltage
Gate to Source Voltage
Drain Current - Continuous (VGS=10) (Note 1)
Pulsed Drain Current
EAS Single Pulse Avalanche Energy
PD
Power Dissipation
Derate above 25oC
TJ, TSTG
RθJC
RθJA
Operating and Storage Temperature
Thermal Resistance Junction to Case
Maximum Thermal Resistance Junction to Ambient
TC = 25°C
TC = 25°C
(Note 2)
(Note 3)
Ratings
40
±20
100
See Figure4
171
227
1.52
-55 to + 175
0.66
52
Units
V
V
A
mJ
W
W/oC
oC
oC/W
oC/W
Package Marking and Ordering Information
Device Marking
Device
Package
FDD9407
FDD9407_F085 D-PAK(TO-252)
Reel Size
13”
Tape Width
12mm
Quantity
2500 units
Notes:
1: Current is limited by bondwire configuration.
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©2013 Fairchild Semiconductor Corporation
FDD9407_F085_F085 Rev. C1
1
www.fairchildsemi.com
1 page  
Typical Characteristics
30
ID = 80A
24
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
18
TJ = 175oC
12
TJ = 25oC
6
0
2468
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 11. Rdson vs Gate Voltage
10
1.8
PULSE DURATION = 80μs
1.6 DUTY CYCLE = 0.5% MAX
1.4
1.2
1.0
0.8
0.6
-80
ID = 80A
VGS = 10V
-40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE(oC)
Figure 12. Normalized Rdson vs Junction
Temperature
1.2 1.2
VGS = VDS
ID = 250μA
ID = 1mA
1.0 1.1
0.8 1.0
0.6 0.9
0.4
-80
-40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE(oC)
Figure 13. Normalized Gate Threshold Voltage vs
Temperature
0.8
-80
-40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)
Figure 14. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
10000
1000
Ciss
Coss
100
f = 1MHz
Crss
VGS = 0V
10
0.1 1 10 100
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 15. Capacitance vs Drain to Source
Voltage
10
ID = 80A
8
VDD = 20V
6
4
2
0
0 20 40 60 80 100
Qg, GATE CHARGE(nC)
Figure 16. Gate Charge vs Gate to Source
Voltage
FDD9407_F085 Rev. C1
5
www.fairchildsemi.com
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