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PDF FDD9411_F085 Data sheet ( Hoja de datos )

Número de pieza FDD9411_F085
Descripción MOSFET ( Transistor )
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! FDD9411_F085 Hoja de datos, Descripción, Manual

FDD9411_F085
N-Channel PowerTrench® MOSFET
40 V, 25 A, 7.8 mΩ
June 2015
Features
„ Typical RDS(on) = 6.2 mΩ at VGS = 10V, ID = 15 A
„ Typical Qg(tot) = 15 nC at VGS = 10V, ID = 15 A
„ UIS Capability
„ RoHS Compliant
„ Qualified to AEC Q101
Applications
„ Automotive Engine Control
„ PowerTrain Management
„ Solenoid and Motor Drivers
„ Electronic Steering
„ Integrated Starter/Alternator
„ Primary Switch for 12V Systems
D
D
G
G
S
DTO-P-2A5K2
(TO-252)
S
For current package drawing, please refer to the Fairchild web
site  at  http://www.fairchildsemi.com/packagedrawings/TO/
TO252A03.pdf.
MOSFET Maximum Ratings TJ = 25°C unless otherwise noted.
Symbol
Parameter
VDSS
VGS
ID
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current - Continuous (VGS=10) (Note 1)
Pulsed Drain Current
EAS Single Pulse Avalanche Energy
PD
Power Dissipation
Derate Above 25oC
TJ, TSTG
RθJC
RθJA
Operating and Storage Temperature
Thermal Resistance, Junction to Case
Maximum Thermal Resistance, Junction to Ambient
TC = 25°C
TC = 25°C
(Note 2)
(Note 3)
Ratings
40
±20
25
See Figure 4
43.2
48.4
0.32
-55 to + 175
3.1
52
Units
V
V
A
mJ
W
W/oC
oC
oC/W
oC/W
Notes:
1: Current is limited by bondwire configuration.
2: Starting TJ = 25°C, L = 0.6mH, IAS = 12A, VDD = 40V during inductor charging and VDD = 0V during time in avalanche.
3: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder
mounting surface
presented here is
of the
based
drain pins. RθJC is
on mounting on a 1
guaranteed by design,
in2 pad of 2oz copper.
while
RθJAis
determined
by
the
board
design.
The maximum rating
Package Marking and Ordering Information
Device Marking
FDD9411
Device
FDD9411_F085
Package
D-PAK(TO-252)
Reel Size
13”
Tape Width
16mm
Quantity
2500units
©2015 Fairchild Semiconductor Corporation
FDD9411_F085 Rev. 1.1
1
www.fairchildsemi.com

1 page




FDD9411_F085 pdf
Typical Characteristics
120
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
ID = 15A
90
TJ = 25oC
60
30
TJ = 175oC
0
456789
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 11. RDSON vs. Gate Voltage
10
2.4
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
2.0
1.6
1.2
0.8
0.4
-80
ID = 15A
VGS = 10V
-40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE(oC)
Figure 12. Normalized RDSON vs. Junction
Temperature
1.5 1.10
VGS = VDS
ID = 1mA
ID = 250μA
1.2 1.05
0.9 1.00
0.6 0.95
0.3
-80
-40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE(oC)
Figure 13. Normalized Gate Threshold Voltage vs.
Temperature
0.90
-80
-40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)
Figure 14. Normalized Drain to Source
Breakdown Voltage vs. Junction Temperature
5000
1000
Ciss
Coss
100
f = 1MHz
Crss
VGS = 0V
10
0.1 1 10 40
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 15. Capacitance vs. Drain to Source
Voltage
10
ID = 15A
8
6
4
VDD = 16V
VDD = 24V
VDD = 20V
2
0
0 4 8 12 16
Qg, GATE CHARGE(nC)
Figure 16. Gate Charge vs. Gate to Source
Voltage
©2015 Fairchild Semiconductor Corporation
FDD9411_F085 Rev. 1.1
5
www.fairchildsemi.com

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