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PDF FDD86540 Data sheet ( Hoja de datos )

Número de pieza FDD86540
Descripción MOSFET ( Transistor )
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! FDD86540 Hoja de datos, Descripción, Manual

FDD86540
N-Channel PowerTrench® MOSFET
60 V, 50 A, 4.1 mΩ
February 2012
Features
General Description
„ Max rDS(on) = 4.1 mΩ at VGS = 10 V, ID = 21.5 A
„ Max rDS(on) = 5 mΩ at VGS = 8 V, ID = 19.5 A
„ 100% UIL tested
„ RoHS Compliant
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers.It has been optimized
for low gate charge, low rDS(on), fast switching speed and body
diode reverse recovery performance.
Applications
„ Primary Switch in isolated DC-DC
„ Synchronous Rectifier
„ Load Switch
D
D
G
S
DT O-P-2A5K2
(T O -25 2)
G
S
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25 °C
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
60
±20
50
136
21.5
120
228
127
3.1
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
0.98
40
°C/W
Device Marking
FDD86540
Device
FDD86540
Package
D-PAK(TO-252)
Reel Size
13 ’’
Tape Width
12 mm
Quantity
2500 units
©2012 Fairchild Semiconductor Corporation
FDD86540 Rev. C
1
www.fairchildsemi.com

1 page




FDD86540 pdf
Typical Characteristics TJ = 25 °C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.05
0.1 0.02
0.01
SINGLE PULSE
RθJC = 0.98 oC/W
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
0.01
10-6
10-5
10-4
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Case Transient Thermal Response Curve
1
©2012 Fairchild Semiconductor Corporation
FDD86540 Rev. C
5
www.fairchildsemi.com

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