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PDF FCPF067N65S3 Data sheet ( Hoja de datos )

Número de pieza FCPF067N65S3
Descripción N-Channel SuperFET III MOSFET
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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FCPF067N65S3
N-Channel SuperFET® III MOSFET
650 V, 44 A, 67 m
January 2016
Features
• 700 V @ TJ = 150 oC
• Typ. RDS(on) = 59 m
• Ultra Low Gate Charge (Typ. Qg = 78 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 715 pF)
• 100% Avalanche Tested
• RoHS Compliant
Description
SuperFET® III MOSFET is Fairchild Semiconductor’s brand-
new high voltage super-junction (SJ) MOSFET family that is uti-
lizing charge balance technology for outstanding low on-resis-
tance and lower gate charge performance. This advanced
technology is tailored to minimize conduction loss, provide
superior switching performance, and withstand extreme dv/dt
rate. Consequently, SuperFET III MOSFET is very suitable for
various power system for miniaturization and higher efficiency.
Applications
• Telecom / Sever Power Supplies
• Industrial Power Supplies
• UPS / Solar
D
GDS
TO-220F
G
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
Parameter
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt
Peak Diode Recovery dv/dt
Power Dissipation
- DC
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
(TC = 25oC)
- Derate Above 25oC
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TJ, TSTG
Operating and Storage Temperature Range
TL Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
RJC
RJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FCPF067N65S3
650
±20
44*
28*
110*
1160
8.8
0.46
100
20
46
0.37
-55 to +150
300
FCPF067N65S3
2.7
62.5
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
©2015 Fairchild Semiconductor Corporation
FCPF067N65S3 Rev. 1.1
1
www.fairchildsemi.com

1 page




FCPF067N65S3 pdf
Typical Performance Characteristics (Continued)
Figure 12. Transient Thermal Response Curve
10
0.5
1
0.2
0.1
0.1 0.05
0.02
0.01
0.01
Single pulse
1E-3
10-5
10-4
PDM
*Notes:
t1
t2
1. ZJC(t) = 2.7oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZJC(t)
10-3
10-2
10-1
100
101
102
t1, Rectangular Pulse Duration [sec]
©2015 Fairchild Semiconductor Corporation
FCPF067N65S3 Rev. 1.1
5
www.fairchildsemi.com

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